用五带k·p模型计算InAs/GaAs/InP及InAs/InP的室温PL谱的能级分布，分析PL谱峰值.发现GaAs的张应变层影响PL峰值位置，与InAs/InP量子点相比，InAs/GaAs/InP量子点PL谱峰值有明显红移，并从能带理论给出解释.%In this paper, the room temperature PL spectra of InAs self-assembled dots grown on GaAs/InP and InP substrates are presented. For analyzing different positions of the PL peaks, we ex amined the strain tensor in these quantum dots using a valence force field model and used a five-band k · p formalism to find the electronic spectra. We found that the GaAs tensile-stained layer affects the position of the room temperature PL peak. The redshift of the PL peak of InAs/GaAs/InP QDs com pared to that of InAs/InP QDs is explained theoretically.
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