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首页> 外文会议>Proceedings of the Summer School on Semiconductor Nanostructures and Optoelectronic Devices >Investigation the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot
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Investigation the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

机译：研究体积，盖层和长宽比对自组织InAs / GaAs量子点的应变分布和电子结构的依赖性

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摘要

Based on the finite element approach, we systematically investigated the strain field distribution of conical-shaped InAs/GaAs self-organized quantum dot using the two-dimension axis-symmetry model. The normal strain, the hydrostatic and biaxial components along the center axis path of the quantum dots was investigated. The dependence of these strain components on volume, height-over ratio and cap layer (covered by cap layer or uncovered quantum dot) are investigated for the quantum grown on the (001) substrate. The dependence of the carriers'' confining potentials and electronic effective mass on the three circumstances discussed above is also calculated in the framework of eight-band k • p theory. The numerical results are in good agreements with the experiment data and published literature.
机译：基于有限元方法，我们使用二维轴对称模型系统地研究了圆锥形InAs / GaAs自组织量子点的应变场分布。研究了沿量子点中心轴路径的正应变，静水力和双轴分量。对于在（001）衬底上生长的量子，研究了这些应变分量对体积，高度比和覆盖层（被覆盖层或未覆盖的量子点覆盖）的依赖性。载流子的约束势和电子有效质量对上述三种情况的依赖性也在八波段k•p理论的框架内进行了计算。数值结果与实验数据和已发表的文献吻合良好。

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