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首页> 外文会议>Proceedings of the technical program, SMTA International 2009 >CHALLENGES OF SOLDER BUMPING CAPACITIVE MICRO-MACHINED ULTRASONIC TRANSDUCER (cMUT) TRENCHED DEVICES
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CHALLENGES OF SOLDER BUMPING CAPACITIVE MICRO-MACHINED ULTRASONIC TRANSDUCER (cMUT) TRENCHED DEVICES

机译：焊锡电容电容式微超声换能器（cMUT）沟槽式设备的挑战

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摘要

Capacitive micro-machined ultrasonic transducers (cMUTs)rncan provide several advantages over conventionalrnpiezoelectric transducers when arrayed using flip chiprnattach. Major challenges in packaging a trenched framedrn2D cMUT device has to do with handling a thin die whichrnhas a nominal thickness of 275um and a backside trenchrncavity. These backside openings produce a cavity whichrnhas dimensions of 150um square and a depth of 255um,rnalong with a silicon pillar that is 90um square in the center.rnThe pad to be bumped with solder resides on the centerrnpillar. As a result of these trenches, it is much morernchallenging to solder bump a non-planar surface on thernbackside of this device, such that one can achieve goodrnadhesion of the under bump metallization (UBM) layer andrnuniform solder bump volume. We have identified processrnissues that arise during the fabrication of trenched cMUTrndevices and the impact they have on achieving a high yieldrnsolder bump. The challenges associated with handling andrnprocessing a trenched wafer will be discussed in this paper.rnThe final outcome will outline the process to achieve arntightly controlled solder bump volume in order to produce arnreliable flip chip interconnection.
机译：当使用倒装芯片阵列进行排列时，电容式微加工超声换能器（cMUT）可以提供优于常规压电换能器的多个优势。封装带沟槽的framedrn2D cMUT器件的主要挑战与处理标称厚度为275um的薄芯片和背面沟槽腔有关。这些背面的开口产生一个空腔，其尺寸为150平方微米，深度为255微米，中心带有一个硅柱，其中心为90平方微米。要与焊料接触的焊盘位于中心柱上。这些沟槽的结果是，在该器件的背面上非凸面焊料凸点具有更大的挑战性，从而可以实现凸点下金属化（UBM）层的良好粘合和均匀的凸点体积。我们已经确定了沟槽式cMUTrn器件制造过程中出现的工艺问题，以及它们对实现高良率焊锡凸块的影响。本文将讨论与处​​理和加工沟槽晶片有关的挑战。最终结果将概述实现可精确控制的焊料凸点体积以实现可靠的倒装芯片互连的过程。

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