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首页> 外文会议>2018年第65回応用物理学会春季学術講演会講演予稿集 >Origin of Mobility Suppression in La-doped BaSnO_3 Films (Ⅰ)
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Origin of Mobility Suppression in La-doped BaSnO_3 Films (Ⅰ)

机译：掺La的BaSnO_3薄膜中迁移抑制的起源（Ⅰ）

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摘要

a-doped BaSnO3 (BLSO, Pm-3m, α=4.115 A, Eg〜3.1eV) single crystal exhibit very high mobility of 320 cm V1s-1. Therefore, BLSO has attracted increasing attention as a novel transparent oxide semiconductor for advanced transparent electronic devices. Recently, many researchers were trying to realize high mobility BLSO thin films. However, the reported mobilities are still far lower than that of single crystals. The origin of mobility suppression of BLSO was considered boundary scattering at columnar domain boundaries, which are generated due to the lattice mismatch (eg. SrTiO3 +5.4 %). In order to minimize the lattice mismatch, Lee et al. used BaSnO3 single crystals as the substrates. However, the resultant mobilities were <100 cm2 V-1s-1,[2] suggesting that the main origin is NOT lattice mismatch.
机译：a掺杂的BaSnO3（BLSO，Pm-3m，α= 4.115 A，Eg〜3.1eV）单晶表现出非常高的迁移率，为320 cm V1s-1。因此，作为用于高级透明电子器件的新型透明氧化物半导体，BLSO引起了越来越多的关注。最近，许多研究人员试图实现高迁移率BLSO薄膜。但是，据报道的迁移率仍然远低于单晶。 BLSO迁移率抑制的起源被认为是由于晶格失配（例如SrTiO3 + 5.4％）而在柱状畴边界处产生的边界散射。为了最小化晶格失配，Lee等人。使用BaSnO3单晶作为衬底。然而，最终的迁移率小于100 cm2 V-1s-1，[2]表明主要来源不是晶格失配。

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