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首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >Domain Matching Epitaxy: A Unified Standard Model for Thin Film Growth
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Domain Matching Epitaxy: A Unified Standard Model for Thin Film Growth

机译：域匹配外延：薄膜生长的统一标准模型

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摘要

We present a unified standard model for thin film epitaxy where single crystal films with small and large lattice misfits are grown by domain matching epitaxy (DME). We define epitaxy as having a fixed orientation rather than the same orientation with respect to the substrate. The DME involves matching of lattice planes between the film and the substrate, and this matching could be different in different directions. In this framework, the conventional lattice matching epitaxy (LME) becomes a special case where a matching of lattice constants or the same planes is involved with a small misfit of less than 7-8%. In large lattice mismatch systems, we show that epitaxial growth of thin films is possible by matching of domains where integral multiples of major lattice planes match across the interface. We illustrate this concept with atomic-level details in the TiN/Si(100) with 3/4 matching, the AlN/Si(100)with 4/5 matching, and the ZnO/α-Al_2O_3(0001) with 6/7 matching of major planes across the film/substrate interface. By varying the domain-size, which is equal to integral multiple of lattice planes, in a periodic fashion, it is possible to accommodate additional misfit beyond the perfect domain matching. Thus, we can potentially design epitaxial growth of films with any lattice misfit on a given substrate with atomically clean surfaces. In addition to atomically clean surfaces, interfacial energy and interatomic potentials play an important role in producing epitaxial thin films. In-situ X-ray diffraction studies on initial stages of growth of ZnO films on sapphire correctly identify a compressive stress and a rapid relaxation within one to two monolayers, consistent with the DME framework and the fact that the critical thickness is less than a monolayer. DME examples ranging from the Ge-Si/Si(100) system with 49/50 matching (2% strain) to Metal/Si systems with 1/2 matching (50% strain) are tabulated, strategies for growing strain-free films by engineering the misfit to be confined near the interface are presented, and the potential for epitaxial growth of films with any lattice misfit on a given substrate with atomically clean surfaces is discussed.
机译：我们提出了薄膜外延的统一标准模型，其中通过晶畴匹配外延（DME）生长具有小和大晶格失配的单晶膜。我们将外延定义为相对于基板具有固定的方向而不是相同的方向。 DME涉及薄膜与基材之间的晶格平面匹配，并且该匹配在不同方向上可能不同。在这种框架下，传统的晶格匹配外延（LME）成为一种特殊情况，其中晶格常数或相同平面的匹配涉及小于7-8％的小失配。在大型晶格失配系统中，我们表明，通过匹配主晶格平面的整数倍在界面上匹配的域，可以实现薄膜的外延生长。我们用3/4匹配的TiN / Si（100），4/5匹配的AlN / Si（100）和6/7的ZnO /α-Al_2O_3（0001）的原子级细节来说明此概念穿过薄膜/基材界面的主要平面的匹配。通过以周期性的方式改变等于晶格平面的整数倍的域大小，有可能容纳超出理想域匹配的其他失配。因此，我们可以潜在地设计在给定的具有原子清洁表面的基板上具有任何晶格失配的薄膜的外延生长。除了原子清洁的表面外，界面能和原子间电势在生产外延薄膜中也起着重要作用。在蓝宝石上ZnO膜生长的初始阶段的原位X射线衍射研究正确地识别了压应力和一到两个单层内的快速松弛，这与DME框架以及临界厚度小于单层的事实是一致的。列出了DME示例，从具有49/50匹配（2％应变）的Ge-Si / Si（100）系统到具有1/2匹配（50％应变）的Metal / Si系统的列表，通过以下方法来生长无应变薄膜：提出了将失配限制在界面附近的工程方法，并讨论了在具有原子清洁表面的给定基板上具有任何晶格失配的膜的外延生长的潜力。

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