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首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >GROWTH KINETICS DURING PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS
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GROWTH KINETICS DURING PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS

机译：脉冲激光沉积复合氧化物薄膜的生长动力学

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摘要

The application of oxide thin films in electronic devices, relying on multilayer technology, requires (atomically) smooth film surfaces and interfaces. Understanding of the different mechanisms affecting the growth mode is, therefore, necessary to control the surface morphology during thin film growth. Two independent processes, i.e., nucleation and growth of islands, play an important role during vapour-phase epitaxial growth on an atomically flat surface. Here, nucleation causes the formation of surface steps and subsequent growth causes the lateral movement of these steps. Both processes affect the final surface morphology and are determined by kinetics, since they take place far from thermodynamic equilibrium. In this paper, the applicability of reflection high-energy electron diffraction (RHEED) to determine the kinetic parameters at growth conditions of complex oxides during pulsed laser deposition (PLD) is demonstrated. A two-dimensional growth model will be presented and applied to the homoepitaxial growth of SrTiO_3 as a model system.
机译：依靠多层技术在电子设备中应用氧化物薄膜需要（原子上）光滑的薄膜表面和界面。因此，必须了解影响生长模式的不同机制，以控制薄膜生长过程中的表面形态。在原子平面上气相相外延生长期间，两个独立的过程，即岛的形核和生长，起着重要的作用。在此，成核导致表面台阶的形成，随后的生长导致这些台阶的横向运动。这两个过程都会影响最终的表面形貌，并由动力学决定，因为它们发生的时间远非热力学平衡。本文证明了反射高能电子衍射（RHEED）在确定复杂氧化物在脉冲激光沉积（PLD）过程中的生长条件下的动力学参数的适用性。提出了二维生长模型，并将其应用于SrTiO_3的同质外延生长作为模型系统。

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