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首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >HYDROTHERMAL GROWTH OF EPITAXIAL PZT
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HYDROTHERMAL GROWTH OF EPITAXIAL PZT

机译：环氧PZT的水热生长

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摘要

This paper describes a paradigm processing approach for the crystallization and growth of ferroelectric thin films by hydrothermal epitaxy. Following this approach, studies investigating the influence of solution composition, suspended phase characteristics, reactor-based variables, and temperature are all factored into targeting optimum conditions for the growth of large crystals. As an illustrative example, results for the hydrothermal epitaxy of lead zirconate titanate (PZT) films on strontium titanate substrates are reported. Films grown from zirconium-titanium hydrous oxides suspended in electrolyte solutions are used to grow transparent, oriented, and pore-free films at thicknesses as large as 1 μm. Crystals as thick as 25 μm can also be grown, but with a loss of epitaxy and the introduction of porosity. Systematic studies of key process variables suggest a particle impingement modulated crystallization mechanism and the implications of this mechanism on the design of crystallizers for robust of PZT film growth are briefly discussed.
机译：本文介绍了一种通过水热外延使铁电薄膜结晶和生长的范例处理方法。按照这种方法，研究溶液组成，悬浮相特性，基于反应堆的变量和温度的影响的研究，都将成为确定大晶体生长的最佳条件的因素。作为说明性实例，报道了钛酸锶基底上的锆钛酸铅（PZT）薄膜的水热外延结果。由悬浮在电解质溶液中的锆钛水合氧化物生长的薄膜用于生长透明，定向和无孔的薄膜，其厚度可达1μm。也可以生长厚达25μm的晶体，但是会失去外延并引入孔隙。对关键工艺变量的系统研究表明，粒子撞击调节了结晶机理，并简要讨论了该机理对稳定PZT膜生长的结晶器设计的影响。

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