ELECTROSTATIC CONSEQUENCES OF THE INTERFACE PHASE FOR CRYSTALLINE OXIDES ON SILICON

机译：晶体上的氧化物在硅上的界面相的静电影响

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The Schottky barrier height or band offset problem is the core issue in electrostatics at oxide/semiconductor junctions. The technological impact of this problem is pervasive. The barrier height to electron exchange at the interfaces controls everything in semiconductor technology from laser diodes to field effect transistors in high-speed logic. The scientific impact of the problem is classic. A fundamental understanding of the barrier height is central to essentially all of semiconductor physics and particularly so for our ongoing study of the length scale physics of cooperative phenomena in multifunctional oxides. In this paper we will review our recent reformulation of the classic Schottky Barrier Problem. The crucial, but missing part, of the junction electrostatics at oxide/semiconductor interfaces is the presence of an interface phase.

机译：肖特基势垒高度或能带偏移问题是氧化物/半导体结处的静电的核心问题。这个问题的技术影响是普遍的。界面处电子交换的势垒高度控制着半导体技术中的一切，从激光二极管到高速逻辑中的场效应晶体管。问题的科学影响是经典的。对势垒高度的基本了解对于几乎所有半导体物理学都是至关重要的，尤其是对于我们正在进行的对多功能氧化物中协作现象的长度尺度物理学的研究而言。在本文中，我们将回顾我们最近对经典肖特基势垒问题的重新表述。氧化物/半导体界面上的结静电的关键但缺少的部分是界面相的存在。

著录项

来源
《Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US)》|2003年|P.27-32|共6页
会议地点 OrlandoFL(US)
作者
F. J. Walker; M. Buongiorno-Nardelli; W. A. Shelton; G. M. Stocks; R. A. McKee;
展开▼
作者单位

University of Tennessee, Knoxville, TN 37996-2200;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词

相似文献

外文文献
中文文献
专利

1. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities [J] . Stegemann Bert, Gad Karim M., Balamou Patrice, Applied Surface Science . 2017,第Feba15期

机译：晶体硅晶片上的超薄氧化硅层：具有低缺陷密度的化学突变SiO2 / Si界面方面先进氧化技术的比较
2. Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy [J] . S.-D. Tzeng, S. Gwo Journal of Applied Physics . 2006,第2期

机译：可变温度静电力显微镜研究氮化硅/氧化硅界面处的电荷俘获特性
3. Modeling the interface between crystalline silicon and silicon oxide polymorphs [J] . Goran Kovacevic, Branko Pivac Physica status solidi . 2013,第4期

机译：模拟晶体硅和氧化硅多晶型物之间的界面
4. ELECTROSTATIC CONSEQUENCES OF THE INTERFACE PHASE FOR CRYSTALLINE OXIDES ON SILICON [C] . F. J. Walker, M. Buongiorno-Nardelli, W. A. Shelton, Epitaxial Growth of Functional Oxides Symposium . 2005

机译：硅结晶氧化物界面相的静电后果
5. Study of spin-dependent transitions and spin coherence at the (111) oriented phosphorous doped crystalline silicon to silicon dioxide interface using pulsed electrically detected magnetic resonance. [D] . Paik, Seoyoung. 2011

机译：使用脉冲电检测磁共振研究（111）取向的磷掺杂晶体硅与二氧化硅界面处的自旋相关跃迁和自旋相干性。
6. Exposure to Fibres Crystalline Silica Silicon Carbide and Sulphur Dioxide in the Norwegian Silicon Carbide Industry [O] . S. Føreland, E. Bye, B. Bakke, -1

机译：挪威碳化硅行业中纤维结晶二氧化硅碳化硅和二氧化硫的暴露
7. Theoretical Study of Transparent Conducting Oxide and Amorphous Silicon Interface and Its Impact on the Properties of Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cell [O] . Sethi Pankaj, Agarwal Shivani, Saha Ivan 2012

机译：透明导电氧化物与非晶硅界面的理论研究及其对非晶硅/晶体硅异质结太阳能电池性能的影响
8. Energetics of crystalline silicon dioxide-silicon (SiO2/Si) interfaces [R] . Chizmeshya, A., Demkov, A., Lenosky, T., 1999

机译：结晶二氧化硅 - 硅（siO2 / si）界面的能量学

ELECTROSTATIC CONSEQUENCES OF THE INTERFACE PHASE FOR CRYSTALLINE OXIDES ON SILICON

摘要

著录项

相似文献

相关主题

期刊订阅