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首页> 外文学位 >Study of spin-dependent transitions and spin coherence at the (111) oriented phosphorous doped crystalline silicon to silicon dioxide interface using pulsed electrically detected magnetic resonance.
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Study of spin-dependent transitions and spin coherence at the (111) oriented phosphorous doped crystalline silicon to silicon dioxide interface using pulsed electrically detected magnetic resonance.

机译：使用脉冲电检测磁共振研究（111）取向的磷掺杂晶体硅与二氧化硅界面处的自旋相关跃迁和自旋相干性。

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摘要

A study of spin-dependent electronic transitions at the (111) oriented phosphorous doped crystalline silicon (c-Si) to silicon dioxide (SiO 2) interface is presented for [31P] = 1015 cm-3 and [31P] = 1016 cm -3 and a temperature range between T ≈ 5K and T ≈ 15K.;Using pulsed electrically detected magnetic resonance (pEDMR), spin-dependent transitions involving 31P donor states and two different interface states are observed, namely (i) Pb centers which can be identified by their characteristic anisotropy and (ii) the E' center which is attributed to defects of the near interface SiO 2 bulk. Correlation measurements of the dynamics of spin-dependent recombination confirm that previously proposed transitions between 31P and the interface defects take place. The influence of these near interface transitions on the 31P donor spin coherence time T 2 as well as the donor spin-lattice relaxation time T 1 is then investigated by comparison of spin Hahn echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR measurements, as well as surface sensitive electrically detected inversion recovery experiments.;The measurements reveal that the T2 times of both interface states and 31P donor electrons spins in proximity of them are consistently shorter than the T1 times, and both T2 and T1 times of the near interface donors are reduced by several orders of magnitude from those in the bulk, at T ≤ 13 K. The T 2 times of the 31P donor electrons are in agreement with the prediction by De Sousa that they are limited by interface defect-induced field noise.;To further investigate the dynamic properties of spin-dependent near interface processes, electrical detection of spin beat oscillation between resonantly induced spin-Rabi nutation is conducted at the phosphorous doped (1016cm-3) Si(111)/SiO2 interface. Predictions of Rabi beat oscillations based on several different spin-pair models are compared with measured Rabi beat nutation data. Due to the g-factor anisotropy of the Pb center (a silicon surface dangling bond), one can tune intra-pair Larmor frequency differences (Larmor separations) by orientation of the crystal with regard to an external magnetic field. Since Larmor separation governs the number of beating spin-pairs, crystal orientation can control the beat current. This is used to identify spin states that are paired by mutual electronic transitions.;Based on the agreement between hypothesis and data, the experiments confirm the presence of the previously observed 31P-P b transition and the previously hypothesized P b to near interface SiO2 bulk state (E' center) transition.
机译：对于[31P] = 1015 cm-3和[31P] = 1016 cm-，研究了自旋相关电子跃迁在（111）取向的磷掺杂晶体硅（c-Si）到二氧化硅（SiO 2）界面上的情况。 3和T＆ap之间的温度范围； 5K和T＆ap; 15K .；使用脉冲电检测磁共振（pEDMR），观察到涉及31P供体态和两种不同界面态的自旋相关跃迁，即（i）可以通过其特征各向异性识别的Pb中心，以及（ii）E'中心是由于近界面SiO 2块的缺陷。自旋依赖性重组动力学的相关性测量结果证实了先前提出的31P与界面缺陷之间的跃迁发生了。然后，通过比较常规体敏脉冲电子顺磁共振和表面自旋哈恩回波衰减测量结果，研究了这些近界面跃迁对31P供体自旋相干时间T 2以及供体自旋晶格弛豫时间T 1的影响。敏感的pEDMR测量结果以及表面敏感的电检测的反演恢复实验。;测量结果表明，界面态和附近的31P供体电子自旋的T2时间始终短于T1时间，T2和T1时间在T≤13 K时，近界面供体的数量比整体中的数量减少了几个数量级。31P供体电子的T 2倍与De Sousa的预测一致，即受界面缺陷的限制-感应场噪声。；；为进一步研究自旋相关的近界面过程的动力学特性，自旋节拍振荡的电学检测在磷掺杂的（1016cm-3）Si（111）/ SiO2界面上进行共振感应自旋-拉比章动之间的相互作用。将基于几种不同自旋对模型的Rabi节拍振荡预测与测得的Rabi节拍章动数据进行比较。由于Pb中心的g因子各向异性（硅表面悬空键），可以通过晶体相对于外部磁场的取向来调整对内拉莫尔频率差（Larmor间隔）。由于拉莫尔分离控制着跳动自旋对的数量，因此晶体取向可以控制拍频电流。这用于识别由相互电子跃迁配对的自旋态。;基于假设和数据之间的一致性，实验证实了先前观察到的31P-Pb跃迁和先前假设的Pb向近界面SiO2本体的存在状态（E'中心）过渡。

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  • 作者

    Paik, Seoyoung.;

  • 作者单位

    The University of Utah.;

  • 授予单位 The University of Utah.;
  • 学科 Physics Quantum.;Physics Electricity and Magnetism.;Physics Condensed Matter.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 107 p.
  • 总页数 107
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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