Dielectric Response of K(Ta,Nb)O_3 Thin Films

机译：K（Ta，Nb）O_3薄膜的介电响应

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The dielectric response of KTa_(063)Nb_(0.37)O_3 thin films grown on MgAl_2O_4 (100) by pulsed laser deposition (PLD) will be examined. In particular the effects of growth temperature (650-800℃), growth pressure (1-100mTorr O_2), and annealing conditions on the tunability, overall capacitance and dielectric losses of the films are described. Capacitance was improved by increasing both the growth temperature and pressure while tunability improved with slightly decreasing temperature and increasing pressure. Annealing improved the loss tangents for all of the films.

机译：将检查通过脉冲激光沉积（PLD）在MgAl_2O_4（100）上生长的KTa_（063）Nb_（0.37）O_3薄膜的介电响应。特别描述了生长温度（650-800℃），生长压力（1-100mTorr O_2）和退火条件对薄膜的可调性，总电容和介电损耗的影响。通过同时增加生长温度和压力来改善电容，而可调谐性随着温度略微降低和压力增加而改善。退火改善了所有薄膜的损耗角正切。

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《Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US)》|2003年|P.211-223|共13页
会议地点 OrlandoFL(US)
作者
J. Sigman; H.J. Bae; D.P. Norton; L.A. Boatner;
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Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32601;

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正文语种 eng
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Dielectric Response of K(Ta,Nb)O_3 Thin Films

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