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首页> 外文会议>Proceedings vol.2003-29; Epitaxial Growth of Functional Oxides Symposium and Electrochemical Society Meeting; 20031012-17; Orlando,FL(US) >J_CS IN HTS THICK FILMS: INFLUENCE OF OUT-OF-PLANE MISORIENTATION
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J_CS IN HTS THICK FILMS: INFLUENCE OF OUT-OF-PLANE MISORIENTATION

机译：HTS厚膜中的J_CS：平面外错误定向的影响

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摘要

Epitaxy of thick (typically a few microns) high-T_c superconducting (HTS) films on metal substrates is desired for coated conductor (CC) applications. Despite the "typical" degradation of the critical current (J_c) at large film thickness on single crystal oxide substrates, thick film coated conductors suffer more significant J_c loss at comparable thickness. This motivated us to investigate effects of out-of-plane misorientations on the thickness dependence and depth profiles of J_cs. Single crystal SrTiO_3 (STO) miscut substrates with different miscut angles of 5, 10 and 15 degrees were employed for controlling the out-of-plane misorientation. YBa_2Cu_3O_7 (YBCO) films of different thickness up to 3.0 μm were fabricated on the miscut as well as flat STO substrates using pulsed laser deposition. Thickness dependence of J_cs was analyzed and interestingly, higher J_cs and a slower decrease of J_c with increasing thickness were observed on YBCO films on 5 and 10 degree miscut STO substrates at 77 K and self field. This seems contradict to what have been reported on HTSCC and suggests microstructure of the HTS films may play the key role in determining the J_c in thick HTS films.
机译：对于涂覆导体（CC）应用，期望金属衬底上的厚（通常为几微米）高T_c超导（HTS）膜的外延。尽管在单晶氧化物衬底上较大的膜厚下，临界电流（J_c）出现了“典型”的下降，但是厚膜涂层的导体在相当的厚度下却遭受了更大的J_c损耗。这促使我们研究面外取向错误对J_cs的厚度依赖性和深度分布的影响。采用具有5、10和15度的不同错切角的单晶SrTiO_3（STO）错切衬底来控制面外取向错误。使用脉冲激光沉积在误切以及平坦的STO基板上制作了厚度最大为3.0μm的不同厚度的YBa_2Cu_3O_7（YBCO）膜。分析了J_cs的厚度依赖性，有趣的是，在77 K和自电场下，在5度和10度错切STO基板上的YBCO膜上观察到J_cs较高和J_c随厚度增加而降低的速度较慢。这似乎与关于HTSCC的报道相矛盾，并暗示了HTS膜的微观结构可能在确定厚HTS膜的J_c中起关键作用。

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