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首页> 外文会议>Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US) >SUB-30 NM ABRUPT JUNCTION FORMATION IN STRAINED SILICON/SILICON-GERMANIUM CMOS DEVICE
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SUB-30 NM ABRUPT JUNCTION FORMATION IN STRAINED SILICON/SILICON-GERMANIUM CMOS DEVICE

机译：应变硅/硅锗锗CMOS器件中SUB-30 NM的抽象结形成

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摘要

In strained Si/Si_(1-x)Ge_x MOS devices , the boron and arsenic dopant diffusivities were found to decrease and increase exponentially with the %Ge in the Si_(1-x)Ge_x respectively. Thus in comparison with those in bulk Si, this behavior facilitates the control of boron transient diffusion, but at the same time presents a new significant roadblock for ultra-shallow arsenic N junction formation in strained Si/Si_(1-x)Ge_x where use of high %Ge( > 20%) for higher electron and hole mobility is desirable. New approaches which use a new co-implant to retard As enhanced diffusion and combination of co-implant and vacancy injection by nitridation to further slow down the boron diffusion have been developed. In particular, these new approaches have created the shallowest and most abrupt P~+ and N~+ junction thus far in strained Si/Si_(1-x)Ge_x substrate i.e. for boron P~+ junction, Xj (junction depth)～18 nm , Xjs (junction abruptness) ～ 3 nm/dec and for arsenic N~+ junction, Xj ～ 20 nm & Xjs ～ 5 nm/dec. In comparison with bulk Si, junction activation is found to be > 10% better for boron and comparable for arsenic dopant. In addition, it was found that the strain in the Si cap has a minimal effect on both the boron and arsenic dopant diffusion.
机译：在应变Si / Si_（1-x）Ge_x MOS器件中，发现硼和砷掺杂剂扩散率分别随Si_（1-x）Ge_x中的％Ge呈指数下降和增大。因此，与体硅相比，这种行为有助于控制硼的瞬态扩散，但同时为使用应变硅/ Si_（1-x）Ge_x时形成超浅砷N结提供了新的重要障碍。为了获得更高的电子和空穴迁移率，需要较高的％Ge（> 20％）。已经开发出使用新的共植入物来延缓As扩散的新方法，以及通过氮化将共植入物与空位注入相结合以进一步减慢硼扩散的新方法。特别是，这些新方法在应变的Si / Si_（1-x）Ge_x衬底中创建了迄今为止最浅，最突变的P〜+和N〜+结，即对于硼P〜+结，结点Xj（结深）〜18 ，Xjs（结突变）〜3 nm / dec，对于砷N〜+结，Xj〜20 nm＆Xjs〜5 nm / dec。与块状硅相比，发现硼的结活化度好于10％，砷掺杂剂的结活化度相当。另外，发现硅帽中的应变对硼和砷掺杂剂扩散的影响最小。

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