APPLICATION OF ULTRA-RAPID THERMAL ANNEALING FOR ELECTRICAL ACTIVATION FOR NEXT GENERATION MOSFETS

机译：超快速热退火技术在下一代MOSFET电激活中的应用

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This paper reports on the ultra-rapid thermal annealing of next generation MOSFETs and their electrical characteristics with device simulation. The junction depth of less than 15 nm was easily realized. However, the device structure parameters and process integration need to be optimized so that the MOSFET can have the required performance. By optimizing the ultra-rapid thermal annealing conditions, device structures and process integration, MOSFET performance can be drastically improved.

机译：本文通过器件仿真报告了下一代MOSFET的超快速热退火及其电特性。易于实现小于15 nm的结深度。但是，需要优化器件结构参数和工艺集成，以便MOSFET可以具有所需的性能。通过优化超快速热退火条件，器件结构和工艺集成，可以大大提高MOSFET的性能。

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来源
《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.39-49|共11页
会议地点 San AntonioTX(US)
作者
Kyoichi Suguro; Takayuki Ito; Kazuml Nishinohara; Koji Matsuo; Toshihiho Iinuma; Hiroshi Itokawa; Yoshimasa Kawase;
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作者单位

Process and Manufacturing Eng. Ctr., Semiconductor Company, Toshiba Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan;

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原文格式 PDF
正文语种 eng
中图分类半导体技术;
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APPLICATION OF ULTRA-RAPID THERMAL ANNEALING FOR ELECTRICAL ACTIVATION FOR NEXT GENERATION MOSFETS

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