ELECTRICAL CHARACTERIZATION OF HfO_xN_y GATE DIELECTRIC WITH DIFFERENT NITROGEN CONCENTRATION PROFILES FORMED BY RAPID THERMAL ANNEALING

机译：快速热退火形成的具有不同氮浓度分布的HfO_xN_y栅电介质的电学表征

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The electrical and reliability characteristics of metal oxide semiconductor (MOS) device with HfO_xN_y gate dielectric formed by different nitrogen concentration profiles were investigated. The C-V measurement with various frequencies and constant voltage stress were used to characterize the charge trapping in the dielectric film. Results show that all the high frequency C-V curves are shifted to the left after stress, indicating positive charge generation in the gate dielectric. The lower equivalent oxide thickness (EOT), as well as smaller flatband voltage shift under constant voltage stress, can be obtained with more nitrogen incorporation into the gate dielectrics.

机译：研究了具有不同氮浓度分布的HfO_xN_y栅极电介质的金属氧化物半导体（MOS）器件的电学和可靠性特性。使用具有各种频率和恒定电压应力的C-V测量来表征电介质膜中的电荷俘获。结果表明，应力作用后所有高频C-V曲线都向左移动，表明栅极电介质中产生正电荷。在栅极电介质中掺入更多的氮时，可以获得较低的等效氧化物厚度（EOT），以及在恒定电压应力下具有较小的平带电压偏移。

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《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.286-291|共6页
会议地点 San AntonioTX(US)
作者
Chin-Lung Cheng; Kuei-Shu Chang-Liao; Tien-Ko Wang;
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Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan, R. O. C.;

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正文语种 eng
中图分类半导体技术;
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2. Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor Deposition [J] . P. Masson, P. Morfouli, J.L. Autran Microelectronic Engineering . 1999,第1a4期

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4. ELECTRICAL CHARACTERIZATION OF HfO_xN_y GATE DIELECTRIC WITH DIFFERENT NITROGEN CONCENTRATION PROFILES FORMED BY RAPID THERMAL ANNEALING [C] . Chin-Lung Cheng, Kuei-Shu Chang-Liao, Tien-Ko Wang International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices . 2004

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ELECTRICAL CHARACTERIZATION OF HfO_xN_y GATE DIELECTRIC WITH DIFFERENT NITROGEN CONCENTRATION PROFILES FORMED BY RAPID THERMAL ANNEALING

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