FURTHER OPTIMIZATION OF PLASMA NITRIDATION OF ULTRA-THIN OXIDES FOR 65nm NODE MOSFETS

机译：用于65nm结MOSFET的超薄氧化物等离子氮化的进一步优化

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Optimization of MOSFET gate dielectric nitridation is performed via N_2 plasma characterization. The energy scales of the electrons and ions are measured in inductively coupled pulsed radio frequency nitrogen plasmas. Controlling both the instantaneous and time-averaged energy scales of the electrons and ions is found to be possible through modifications to the pulsed-RF plasma apparatus. These modifications result in up to a 15% and 7% improvement in nMOS and pMOS low-field mobility, respectively, at fixed gate leakage current when compared to results with the standard apparatus. The results indicate a means to extend silicon oxynitride as a useful gate dielectric for the 65 nm node.

机译：MOSFET栅极介电氮化的优化是通过N_2等离子体表征进行的。电子和离子的能级在感应耦合脉冲射频氮等离子体中测量。发现通过修改脉冲RF等离子体设备可以同时控制电子和离子的瞬时和时间平均能级。与标准设备的结果相比，这些修改在固定的栅极泄漏电流下分别使nMOS和pMOS低场迁移率分别提高了15％和7％。结果表明一种方法可以扩展氮氧化硅作为65 nm节点的有用栅极电介质。

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来源
《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.236-243|共8页
会议地点 San AntonioTX(US)
作者
P.A. Kraus; T.C. Chua; A. Rothschild; F.N. Cubaynes; A. Veloso; S. Mertens; L. Date; T. M. Bauer; K. Z. Ahmed; J. Campbell; F. Nouri; J. Cruse; R. Schreutelkamp; M. Schaekers;
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Applied Materials, Sunnyvale, CA, USA;

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正文语种 eng
中图分类半导体技术;
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专利

1. Letter to the editor: impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs [J] . Chun Meng Lek, Byung Jin Cho, Chew Hoe Ang Semiconductor science and technology . 2002,第6期

机译：致编辑的信：超薄栅极氧化物的解耦等离子体氮化对p沟道MOSFET性能的影响
2. Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin ( < 2.5 nm) plasma nitrided gate dielectric [J] . H.Y. Chiu, Y.K. Fang, F.R. Juang Materials science in semiconductor processing . 2012,第1期

机译：氮化后退火温度对具有超薄（<2.5 nm）等离子氮化栅极电介质的纳米MOSFET性能的影响
3. Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics [J] . Yandong He, Mingzhen Xu, Changhua Tan Solid-State Electronics . 2005,第1期

机译：等离子体氮化对超薄栅极氧化物电学和可靠性特征的影响
4. Fabrication of HfSiON Gate Dielectrics by Plasma Oxidation and Nitridation, Optimized for 65nm node Low Power CMOS Applications [C] . Seiji Inumiya, Katsuyuki Sekine, Shoko Niwa, Symposium on VLSI Technology . 2003

机译：通过等离子体氧化和氮化制造HFSION栅极电介质，优化了65nm节点低功率CMOS应用
5. Studies in remote plasma nitridation of silicon dioxide for metal-oxide-semiconductor gate dielectric applications. [D] . Eason, Kwame Nkrumah. 2000

机译：用于金属氧化物半导体栅极介电应用的二氧化硅远程等离子体氮化研究。
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FURTHER OPTIMIZATION OF PLASMA NITRIDATION OF ULTRA-THIN OXIDES FOR 65nm NODE MOSFETS

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