GATE-SOURCE /DRAIN EXTENSION OVERLAP CONTROL WITH ANGLED IMPLANTS: TCAD MODELING STUDY

机译：带角度植入的门源/漏极扩展重叠控制：TCAD建模研究

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Angled implant along with non-melt laser anneal is proposed as a feasible solution for the future device technology nodes. While non-melt laser allows the formation of very shallow < 15 nm and abrupt < 3nm/dec, angle implant allows the formation of desired gate/extension overlap. High tilt arsenic implants followed by laser anneals were performed to study the junction depth and sheet resistance variations with tilt angle. NMOS and PMOS processes were simulated to understand the effect of tilt implants and non-melt laser anneal on the junction depth and gate overlap of the source/drain extensions. TCAD modeling shows upon increasing the tilt angle from 0 to 30 degree the gate/extension overlap can increase from 2 nm to over 10 nm. Concerns regarding channeling at high tilt angles were also addressed in this work, and a solution based on Ge pre-amorphization will be discussed.

机译：提出了有角度的植入物以及非熔融激光退火技术，作为未来设备技术节点的可行解决方案。虽然非熔融激光允许形成非常浅的<15 nm和突然的<3nm / dec，但是角度注入可以形成所需的浇口/延伸部分重叠。进行高倾斜砷注入，然后进行激光退火，以研究结深度和薄层电阻随倾斜角的变化。模拟了NMOS和PMOS工艺，以了解倾斜注入和非熔融激光退火对源/漏扩展的结深度和栅极重叠的影响。 TCAD建模显示，将倾斜角度从0度增加到30度时，浇口/延伸部分重叠可能从2 nm增加到10 nm以上。在这项工作中还解决了有关在高倾斜角下沟道的问题，并且将讨论基于Ge预非晶化的解决方案。

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《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.127-134|共8页
会议地点 San AntonioTX(US)
作者
Sunderraj Thirupapuliyur; Amir Al-Bayati; Amitabh Jain; Abhilash Mayur;
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Applied Materials Inc., Front End Products Division, 3050 Bowers Ave, Santa Clara, CA 95054, USA;

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正文语种 eng
中图分类半导体技术;
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GATE-SOURCE /DRAIN EXTENSION OVERLAP CONTROL WITH ANGLED IMPLANTS: TCAD MODELING STUDY

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