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首页> 外文会议>Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US) >RADIATIVE PROPERTIES OF SILICON CONSIDERING SURFACE IMPERFECTIONS AND CHAMBER EFFECTS
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RADIATIVE PROPERTIES OF SILICON CONSIDERING SURFACE IMPERFECTIONS AND CHAMBER EFFECTS

机译：考虑表面缺陷和腔效应的硅辐射特性

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摘要

The accuracy of radiometric temperature measurement for rapid thermal processing (RTF) depends largely on the uncertainty in predicting the effective emissivity of the wafer. The effective emissivity can be strongly affected by surface roughness, thin-film coatings, and multiple reflections between the wafer and the enclosure walls. The directional dependence of the radiative properties is best described by the bidirectional reflectance distribution function (BRDF). We have developed both the net-radiation and Monte Carlo methods to simulate the chamber effects on the effective emissivity, taking into account that the wafer surface may have various bidirectional characteristics. Several methods were used to determine the radiative properties of the silicon wafer, such as the surface microfacet model, coupled with the Monte Carlo simulation. Furthermore, a three-axis automated scatterometer (TAAS) has been constructed to measure both the in-plane and out-of-plane bidirectional reflectance and transmittance of rough and patterned wafers. This work presents an overview of recent theoretical and experimental studies on the radiative properties of silicon-based materials considering surface modifications and chamber effects.
机译：快速热处理（RTF）的辐射温度测量的准确性很大程度上取决于预测晶片有效发射率的不确定性。有效发射率会受到表面粗糙度，薄膜涂层以及晶圆和外壳壁之间多次反射的强烈影响。双向反射率分布函数（BRDF）可以最好地描述辐射特性的方向依赖性。考虑到晶片表面可能具有各种双向特性，我们已经开发了净辐射和蒙特卡洛方法来模拟腔室对有效发射率的影响。几种方法用于确定硅晶片的辐射特性，例如表面微面模型以及蒙特卡洛模拟。此外，已经构建了三轴自动散射仪（TAAS），以测量粗糙和有图案的晶片的平面内和平面外双向反​​射率和透射率。这项工作概述了考虑到表面改性和腔室效应的硅基材料辐射特性的最新理论和实验研究。

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