ATOMIC LAYER DEPOSITION OF DIELECTRICS AND ELECTRODES FOR EMBEDDED-DRAM CAPACITOR CELLS IN 90 NM TECHNOLOGY AND BEYOND

机译：90 NM及以后工艺的嵌入式DRAM电容器电池的电介质和电极的原子层沉积

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An overview is given on the use of ALD deposition technologies for high-k dielectrics and electrodes in MIM capacitors for embedded-DRAM in 90 nm technology and beyond. ALD-Al_2O_3 and ALD-HfO_2 dielectrics have been evaluated together with MOCVD-Ta_2O_5 for capacitors targeted at EOT < 18 A. Improved leakage performance was obtained through control of the dielectric/electrode interface. This includes the use of ALD-Al_2O_3 as a thermo-dynamic and electronic barrier between Ta_2O_5 and electrode and the use of ALD-TiN as electrode material. ALD-Al_2O_3 and ALD-HfO_2 both give good leakage performance and stability with temperature, with HfO_2 offering most robust capacitance performance for next generation embedded-DRAM processes.

机译：概述了ALD沉积技术在90 nm及以后的嵌入式DRAM的MIM电容器中用于高k电介质和电极的用途。针对目标EOT <18 A的电容器，已经对ALD-Al_2O_3和ALD-HfO_2电介质以及MOCVD-Ta_2O_5进行了评估。通过控制电介质/电极界面，可以改善漏电性能。这包括使用ALD-Al_2O_3作为Ta_2O_5与电极之间的热力学和电子势垒，以及使用ALD-TiN作为电极材料。 ALD-Al_2O_3和ALD-HfO_2都具有良好的泄漏性能和温度稳定性，其中HfO_2为下一代嵌入式DRAM工艺提供了最可靠的电容性能。

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《Proceedings vol.2004-01; International Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II; 20040510-12; San Antonio,TX(US)》|2004年|P.328-340|共13页
会议地点 San AntonioTX(US)
作者
E. Gerritsen; N. Jourdan; M. Piazza; D. Fraboulet; F. Monsieur; J.F. Damlencourt; F. Martin; E. Mazaleyrat; K. Barla; G. Bartlett;
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Crolles-2 Alliance 850 Rue Jean Monnet, Crolles, France;

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正文语种 eng
中图分类半导体技术;
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ATOMIC LAYER DEPOSITION OF DIELECTRICS AND ELECTRODES FOR EMBEDDED-DRAM CAPACITOR CELLS IN 90 NM TECHNOLOGY AND BEYOND

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