Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs

机译：温度对部分耗尽SOI nMOSFET中基于漏电流瞬变的发电寿命确定的影响

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This paper presents an analysis of the temperature influence on the generation lifetime determination using drain current transients in floating body partially SOI nMOSFETs fabricated with a 0.13 μm SOI CMOS technology. The device parameters used to calculate the generation lifetime are studied as a function of the temperature from 20 ℃ to 80℃ and the maximum influence is found to be about 13%. A sensitivity analysis is done in function of the gate oxide thickness and silicon film concentration and in the worst case the influence on the generation lifetime determination is found to be around 17%. Considering that for many applications these changes can be neglected, a simple method to estimate the generation lifetime is proposed. The method is experimentally applied and the maximum error is found to be in the range of 6 %.

机译：本文使用0.13μmSOI CMOS技术制造的浮体部分SOI nMOSFET中的漏极电流瞬变，对温度对确定寿命的影响进行了分析。研究了用于计算发电寿命的设备参数与20℃至80℃温度之间的函数关系，发现最大影响约为13％。根据栅极氧化层厚度和硅膜浓度进行灵敏度分析，在最坏的情况下，发现对寿命确定的影响约为17％。考虑到对于许多应用而言，这些变化可以忽略不计，因此提出了一种估算发电寿命的简单方法。该方法已通过实验应用，发现最大误差为6％。

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《Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US)》|2004年|P.346-356|共11页
会议地点 HonoluluHI(US)
作者
J. A. Martino; J.M. Rafi; A. Mercha; E. Simoen; C. Claeys;
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Laboratorio de Sistemas Integraveis, University of Sao Paulo, Brazil;

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正文语种 eng
中图分类 TN304.12;
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专利

1. Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs [J] . J.M. Rafi, E. Simoen, K. Hayama, Microelectronics & Reliability . 2006,第9a11期

机译：在部分耗尽的SOI nMOSFET薄栅极氧化物浮体中热载流子引起的漏极电流滞后和瞬变的退化
2. Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs [J] . J.M. Rafi, E. Simoen, A. Mercha, Solid-State Electronics . 2005,第9期

机译：热载流子应力对部分耗尽SOI nMOSFET的薄栅氧化物的栅极感应浮体效应和漏极电流瞬变的影响
3. Junction influence on drain current transients in partially-depleted SOI MOSFETs [J] . Ionescu A.M., Chovet A. Electronics Letters . 1997,第20期

机译：结对部分耗尽SOI MOSFET中漏极电流瞬变的影响
4. Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs [C] . J. A. Martino, J. M. Rafi, A. Mercha, International Symposium on High Purity Silicon . 2004

机译：基于漏极电流瞬变的产生寿命测定的温度影响部分耗尽的SOI NMOSFET
5. Implementation of a fully depleted Δ-channel SOI NMOSFET [D] . Jiao, Zhixian 2000

机译：完全耗尽的Δ沟道SOI NMOSFET的实现
6. Can we use rapid lifetime determination for fast, fluorescence lifetime based, metabolic imaging? Precision and accuracy of double-exponential decay measurements with low total counts [O] . Susana Figueiredo Silva, José Paulo Domingues, António Miguel Morgado 2015

机译：我们可以使用快速寿命测定来进行基于荧光寿命的快速代谢成像吗？总计数低的双指数衰减测量的精度和准确性
7. Characteristics and physical mechanisms of positive bias and temperature stressinduced drain current degradation in HfSiON nMOSFETs [O] . Chien-tai Chan, Student Member, Chun-jung Tang, 2006

机译：HfsiON nmOsFET中正偏压和温度应力引起漏极电流退化的特性和物理机制

Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs

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