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FORMATION MECHANISM OF VOIDS AND OXIDE PRECIPITATES IN SILICON CRYSTALS

机译:硅晶体中空隙和氧化物沉淀的形成机理

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摘要

Until recently, the homogeneous nucleation mechanism has furnished a general explanation for the formation of void defects in silicon crystals. While this mechanism has served very well to describe the behavior of void formation, there are phenomena that it fails to explain. Specifically, there are two such phenomena: the switch of the defect mode from voids to oxygen precipitates due to the increasing of cooling rate of the crystal, and the fluctuation of void density in synchronization with the striation of oxygen along the crystal axis. In this paper we investigate these phenomena experimentally and discuss them using the homogeneous nucleation model and the sequential model proposed by Voronkov. The sequential model assumes homogeneous nucleation of oxygen precipitates and subsequent transformation of the larger particles into voids by cavitation induced by a high vacancy-controlled negative pressure in the oxide. Our experimental and calculation results supported the sequential model for void formation.
机译:直到最近,均相成核机制已为硅晶体中形成空洞缺陷提供了一般解释。尽管此机制很好地描述了空隙形成的行为,但仍有一些现象无法解释。具体地,存在两种这样的现象:由于晶体的冷却速率的增加,缺陷模式从空隙转变为氧沉淀,以及与氧沿着晶轴的条纹同步的空隙密度的波动。在本文中,我们对这些现象进行了实验研究,并使用沃伦科夫(Voronkov)提出的均匀成核模型和顺序模型对其进行了讨论。顺序模型假定氧沉淀的均相成核,随后由于氧化物中由高空位控制的负压引起的空化而使较大的颗粒转变为空隙。我们的实验和计算结果支持了空隙形成的顺序模型。

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