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P method for measuring the behavior of oxygen precipitates in a silicon single crystal, a process determining method for manufacturing a silicon single crystal wafer, and a recording medium having a program for measuring oxygen precipitate behavior in a silicon single crystal
P method for measuring the behavior of oxygen precipitates in a silicon single crystal, a process determining method for manufacturing a silicon single crystal wafer, and a recording medium having a program for measuring oxygen precipitate behavior in a silicon single crystal
There is provided a method of measuring oxygen precipitation behavior in a silicon single crystal using a programmed computer. According to this method, the initial oxygen concentration of the silicon single crystal, the impurity concentration or resistivity of the silicon single crystal, and the heat treatment conditions performed at the normal state of the silicon single crystal are inputted, and the amount of oxygen precipitated after the heat treatment, The bulk defect density is calculated. This method can quickly, simply and accurately measure the amount of oxygen precipitated and bulk defect density during or after the heat treatment.
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