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首页> 外文会议>Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US) >THERMAL EVOLUTION OF HYDROGEN RELATED DEFECTS IN SILICON INVESTIGATED BY μ-RAMAN SPECTROSCOPY
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THERMAL EVOLUTION OF HYDROGEN RELATED DEFECTS IN SILICON INVESTIGATED BY μ-RAMAN SPECTROSCOPY

机译：μ-拉曼光谱研究硅中氢相关缺陷的热演化

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摘要

The thermal evolution of various Si-H bonds, H_2 molecules, and hydrogen induced platelets (HIPs) in H-plasma treated Czochralski (Cz) silicon wafers has been investigated with depth resolved μ-Raman Spectroscopy (μRS), Cross-sectional Transmission Electron Microscopy (XTEM), and Atomic Force Microscopy (AFM). It is found that the intensities of the Raman peaks of the Si-H bonds and the H_2 molecules in dependence on the thermal annealing duration are highly correlated. The results imply that the Raman sub-peak at ～2105 cm~(-1) can be assigned to the dihydride (SiH_2) located at the inner surface of the (100)-oriented HIPs. From the comparison of μRS applied on the original wafer surface and μRS on a beveled surface one can conclude that the sub-peak at ～ 2095 cm~(-1) can be assigned to the monohydride (SiH) located at the H-plasma damaged surface layer. Another sub-peak at ～ 2083 cm~(-1) is assigned to the SiH bonds at the inner surface of the (111)-oriented HIPs. Based on these assignments, it can be seen that the (111)-oriented HIPs gradually anneal out, while the (100)-oriented HIPs trap hydrogen atoms, which are released from the damaged surface layer.
机译：使用深度分辨μ拉曼光谱法（μRS），截面透射电子研究了H等离子体处理的切克劳斯基（Cz）硅晶片中各种Si-H键，H_2分子和氢诱导的血小板（HIP）的热演化。显微镜（XTEM）和原子力显微镜（AFM）。发现Si-H键和H_2分子的拉曼峰的强度与热退火持续时间有关。结果表明，〜2105 cm〜（-1）处的拉曼亚峰可归属于（100）取向HIPs内表面的二氢化物（SiH_2）。通过比较原始晶片表面上的μRS和斜面上的μRS，可以得出结论：〜2095 cm〜（-1）处的亚峰可归因于位于受损H等离子体处的一元氢化物（SiH）表层。 〜2083 cm〜（-1）处的另一个亚峰分配给（111）取向HIP内表面的SiH键。基于这些分配，可以看出，（111）取向的HIP逐渐退火，而（100）取向的HIP捕获从受损表面层释放的氢原子。

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