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首页> 外文会议>Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US) >The saw-damage-induced structural defects on the surface of silicon crystals
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The saw-damage-induced structural defects on the surface of silicon crystals

机译：锯齿损伤引起的硅晶体表面结构缺陷

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摘要

During the process of cutting silicon ingots into wafers, saw damage is produced on the surface of silicon crystals. This saw damage induces defects during the oxidation of the silicon. Unlike silica slurry wet blasting, which is known to induce OISF (Oxidation-Induced Stacking Faults), saw damage produced by the wire sawing process induces the generation of dislocation loops during the oxidation process. The type of defects formed during the oxidation process seems to depend on the amount of damage: if the damage is bigger than some critical value, then dislocation loops are generated. If the damage is smaller than this critical value, then stacking faults are generated during oxidation.
机译：在将硅锭切割成晶圆的过程中，硅晶体表面会产生锯齿损坏。这种锯的损坏在硅的氧化过程中引起缺陷。与已知会引起OISF（氧化引起的堆垛层错）的二氧化硅浆料湿喷丸不同，线锯工艺产生的锯片损伤会在氧化过程中引起位错环的产生。氧化过程中形成的缺陷类型似乎取决于损伤的程度：如果损伤大于某个临界值，则会生成位错环。如果损伤小于该临界值，则在氧化过程中会产生堆垛层错。

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