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首页> 外文会议>Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US) >DEFECT ENGINEERING AND CONTROL IN NANOCRYSTALLINE SILICON
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DEFECT ENGINEERING AND CONTROL IN NANOCRYSTALLINE SILICON

机译：纳米硅的缺陷工程与控制

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摘要

The electron-spin resonance, Fourier-transformed infrared spectroscopy, photoluminescence spectroscopy methods are used for defects studying. The effect of hydrogen termination of dangling bonds causes the increase in luminescent signal. By the decreasing of hydrogen content due to the desorption from film surface and increase of hydrogen diffusion in film the luminescent signal become lower. The lowering in hydrogen content during annealing results in growth of stability in dark conductivity properties. The defect density increases by annealing. Defect engineering is determined by hydrogen dilution and making of subsequent annealing procedure. There is a saturation of electric properties because the water removing from surface. The process of production of such defects as E' and A centers are irreversible. We suppose that the hydrogen treatment terminate dangling bond to control photoluminescent signal.
机译：电子自旋共振，傅立叶变换红外光谱，光致发光光谱法用于缺陷研究。氢键悬空键的终止导致发光信号的增加。由于由于从膜表面解吸而引起的氢含量的减少以及膜中氢的扩散的增加​​，发光信号变低。退火期间氢含量的降低导致暗电导率特性的稳定性增加。缺陷密度通过退火而增加。缺陷工程是通过氢稀释和随后的退火程序来确定的。电性能饱和，因为水从表面上去除了。诸如E'和A中心这样的缺陷的产生过程是不可逆的。我们假设氢处理终止了悬空键以控制光致发光信号。

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