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首页> 外文会议>Proceedings vol.2004-05; International Symposium on High Purity Silicon and Meeting of the Electrochemical Society; 20041003-08; Honolulu,HI(US) >PAIRING REACTIONS BETWEEN SUBSTITUTIONAL AND INTERSTITIAL DEFECTS CAUSED BY THE SAME TRANSITION METAL IN SILICON FLOAT ZONE CRYSTALS
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PAIRING REACTIONS BETWEEN SUBSTITUTIONAL AND INTERSTITIAL DEFECTS CAUSED BY THE SAME TRANSITION METAL IN SILICON FLOAT ZONE CRYSTALS

机译：硅浮区晶体中相同过渡金属引起的取代和内部缺陷之间的配对反应

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摘要

Experimental and theoretical results for the pairing reactions between interstitial M_i and substitutional MS transition metal (TM) defects in FZ crystals are presented for Cu, Ni, Co, Ag, Pd. Defect pairs are formed during crystal cooling near room temperature, whenever the precipitation of the dopants in the range of supersaturation is sufficiently small. Probably caused by hydrogen a complete pairing is observed for the 3d-dopants in dislocated crystals grown in argon (B) but not in those grown in vacuum (A). The pairing is stronger in dislocation-free crystals than in dislocated crystals for both growth techniques. Experimental and theoretical results are presented further for the interpretation of isochronal annealing experiments on samples with thickness 1 mm. It is shown that the rate of forming isolated defects M_S is determined by the dissociation of the pairs and by the precipitation of the defects M_i. A strong dependence of the formation rate on the depth to the surfaces is observed. The profiles can be interpreted with the out-diffusion of self-interstitials and in-diffusion of vacancies, which favors the precipitation of the interstitial TM defects. For the Cu pairs a binding energy E_P = 1.15 eV is determined, whereas for the other dopants 1.7 ≤ E_P ≤ 1.95 eV holds.
机译：提出了FZ晶体中的Cu，Ni，Co，Ag，Pd的间隙M_i与替代MS过渡金属（TM）缺陷配对反应的实验和理论结果。每当过饱和范围内的掺杂剂沉淀足够小时，在室温附近的晶体冷却期间就会形成缺陷对。可能是由氢引起的，在氩气（B）中生长的位错晶体中观察到3d掺杂剂完全配对，而在真空（A）中生长的晶体中没有观察到。对于两种生长技术，无位错晶体中的配对均比位错晶体中的配对更强。还提供了实验和理论结果，用于解释厚度为1 mm的样品的等时退火实验。结果表明，形成隔离缺陷M_S的速率取决于对的解离和缺陷M_i的析出。观察到形成速率对表面深度的强烈依赖性。可以通过自填隙缝的外扩散和空位的扩散来解释这些轮廓，这有利于填隙TM缺陷的沉淀。对于Cu对，确定结合能E_P ＝ 1.15eV，而对于其他掺杂剂，保持1.7≤E_P≤1.95eV。

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