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EXPLORING THE RELATIONSHIP OF MORPHOLOGY AND STRUCTURE TO PIT INITIATION IN Cl-IMPLANTED Al THIN FILMS

机译:探索Cl-植入的Al薄膜的形貌与结构的关系

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摘要

Implantation of Cl into Al thin films leads to pitting in a sulfate environment, where the pitting potential decreases with increasing Cl concentration (1). Changes in film morphology, structure and composition resulting from the implantation process have been investigated here in order to more fully characterize the effects of implantation as a function of implant fluence. Sputtering of the film surface during the implantation process results in faceting at grain boundaries, as observed by atomic force microscopy. Point defect agglomerates are observed by dark field scanning transmission electron microscopy (STEM). Spectral imaging shows that the Cl concentration is locally non-uniform. Each of these effects becomes more pronounced as the implant fluence increases. The impact of these morphological, structural and compositional effects resulting from the implantation process on pitting is currently unknown.
机译:将Cl注入Al薄膜会导致在硫酸盐环境中产生点蚀,在该环境中,点蚀电位随Cl浓度的增加而降低(1)。为了更充分地表征随注入通量的变化而产生的注入效应,这里研究了由注入过程引起的膜形态,结构和组成的变化。如原子力显微镜所观察到的那样,在注入过程中薄膜表面的溅射会在晶界处产生刻面。通过暗场扫描透射电子显微镜(STEM)观察到点缺陷附聚物。光谱成像显示Cl浓度局部不均匀。随着植入能量密度的增加,这些效应中的每一种都变得更加明显。目前尚不了解由注入过程引起的这些形态,结构和组成影响对点蚀的影响。

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