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SU-8 LOW CONTRAST PROCESS FOR MULTI-LEVEL E-BEAM LITHOGRAPHY

机译:多级电子束光刻的SU-8低对比度工艺

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摘要

This work shows the development of a low contrast lithographic process for multi-level lithography using the negative tone chemically amplified photoresist SU-8 - usually employed in high aspect ratio structures, I. E., high contrast processing. An electron beam lithography system is used and multilevel topographic structures are obtained. Due to its mechanical and optical properties, with the aid of accurate processing, SU-8 resist is especially suitable for versatile direct write systems, aiming the fabrication of multilevel and/or continuous-relief micro-optical elements such as Fresnel lenses.
机译:这项工作显示了使用负性化学放大的光刻胶SU-8进行多级光刻的低对比度光刻工艺的发展-通常用于高纵横比结构,即高对比度处理。使用电子束光刻系统,并获得多层形貌结构。由于SU-8抗蚀剂的机械和光学特性,在精确加工的帮助下,它特别适用于多功能直接写入系统,旨在制造多级和/或连续浮雕微光学元件,例如菲涅耳透镜。

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