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首页> 外文期刊>Microelectronic Engineering >Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes
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Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes

机译：混合光刻：光学和电子束光刻的结合。研究高级设备节点的过程集成和设备性能的方法

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Moore's law continues to prescribe ever smaller device dimensions with each new device node. While the new device nodes are scheduled at even pace, the innovation required to obtain commensurate device performance is greater with every device node. This increased complexity in the process, while maintaining the momentum of Moore's law, is increasing the pressure on the development teams to increase the learning rate on new processes and their interactions. There have been many publications on mix-and-match lithography to enable early learning. In this technique, one whole device level (often the gate definition) is replaced by a different technology (often e-beam), while all the other levels continue to be patterned using traditional optical lithography. Hybrid lithography, by contrast, is the use of different lithography technologies on a single resist level which enables the marriage of both technology's best properties. In this work, we present hybrid e-beam direct write and optical lithography, enabling high throughput (optical), high-resolution (EBDW), excellent overlay (EBDW) and fast prototyping (EBDW). We will show how IBM has used hybrid lithography to enable early learning on back end of the line (BEOL) processes and on extremely scaled SRAM cells (0.143 μm~2) [D.M. Fried, et al., IEDM Proceedings (2004) 261-264].
机译：摩尔定律继续对每个新设备节点规定越来越小的设备尺寸。尽管新设备节点的调度速度均匀，但每个设备节点要获得相应的设备性能所需的创新就更大。流程不断增加的复杂性，同时又保持了摩尔定律的势头，同时也增加了开发团队的压力，要求他们提高对新流程及其交互作用的学习率。为了实现早期学习，已经有很多关于混合匹配光刻的出版物。在这种技术中，整个设备级（通常是栅极定义）被另一种技术（通常是电子束）所替代，而所有其他级都继续使用传统的光刻技术进行图案化。相比之下，混合光刻技术是在单个抗蚀剂级别上使用不同的光刻技术，从而使这两种技术的最佳性能结合在一起。在这项工作中，我们提出了混合电子束直接写入和光学光刻技术，可实现高吞吐量（光学），高分辨率（EBDW），出色的覆盖率（EBDW）和快速成型（EBDW）。我们将展示IBM如何使用混合光刻技术在生产线后端（BEOL）流程和超大规模SRAM单元（0.143μm〜2）上进行早期学习。 Fried等，IEDM Proceedings（2004）261-264]。

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