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首页> 外文期刊>Diamond and Related Materials >Very high frequency SAW devices based on nanocrystalline diamond and aluminum nitride layered structure achieved using e-beam lithography
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Very high frequency SAW devices based on nanocrystalline diamond and aluminum nitride layered structure achieved using e-beam lithography

机译：利用电子束光刻技术实现的基于纳米晶金刚石和氮化铝层状结构的超高频声表面波器件

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Very high frequency surface acoustic wave (SAW) devices based on the AIN/diamond layered structure are fabricated by direct writing using e-beam lithography on the nucleation side of nanocrystalline diamond (NCD) films deposited by microwave plasma assisted chemical vapor deposition process. The NCD nucleation side is characterized from the point of view of microstructure, morphology and surface topography. Surface roughness as low as 6 nm is reached, which enhances the deposition of A1N film on this flat surface. The interdigital transducers IDTs made in aluminum with lateral resolution down to 600 nm are successfully patterned on the A1N/NCD layered structure with an adapted technological process. Experimental results show that the Rayleigh wave and the higher mode are generated. A high frequency around 4 GHz (mode 1) is obtained for the considered layered structure SAW device, exhibiting a phase velocity of 9200 m/s taking into account the wavelength of 2.4 mu m. This value agrees well with calculated values determined from dispersion curves of phase velocity.
机译：基于AIN /金刚石层状结构的超高频表面声波（SAW）器件是通过使用电子束光刻技术在通过微波等离子体辅助化学气相沉积工艺沉积的纳米晶金刚石（NCD）薄膜的成核侧直接写入而制造的。 NCD成核侧从微观结构，形态和表面形貌的角度来表征。达到低至6 nm的表面粗糙度，这增强了AlN膜在该平坦表面上的沉积。铝制叉指换能器IDT（横向分辨率低至600 nm）已通过适当的工艺过程成功地在A1N / NCD分层结构上进行了图案化。实验结果表明，产生了瑞利波和较高模。对于考虑的分层结构SAW器件，获得了大约4 GHz的高频（模式1），考虑到2.4μm的波长，其相速度为9200 m / s。该值与根据相速度的色散曲线确定的计算值非常吻合。

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