MICRO-RAMAN ANALYSIS OF HYDROGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

机译：克拉斯基硅中与氢有关的缺陷的微拉曼分析

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The incorporation of hydrogen into silicon can significantly alter its properties, due to its high reactivity. The hydrogen related impact on the Czochralski silicon (Cz Si) wafers can be separated into either surface, subsurface or bulk effects depending on the local regions, where the hydrogen caused actions occur. By μ- Raman spectroscopy the formation of hydrogen related defects - including vacancy-hydrogen complexes, hydrogen saturated silicon dangling bonds, H_2 molecules trapped in multi-vacancies or platelets - has been investigated in hydrogen implanted and subsequently plasma hydrogenated and annealed Cz Si wafers. Annealing was done either in air or in forming gas ambient. The investigations were applied under conditions, which are relevant for ion-cut processes for silicon layer exfoliation at reduced implantation doses as compared to standard procedures like the famous smart-cut~R process. Depth resolved μ-Raman spectroscopy was also applied as a useful method for the identification of the various hydrogen related defects in the subsurface regions of the treated wafers. The investigation shows that μ-Raman spectroscopy is a quite simple and useful tool to study hydrogen related defects in silicon even with good spatial resolution.

机译：由于氢的高反应性，将氢掺入硅中可显着改变其性能。与氢相关的对切克劳斯基硅（Cz Si）晶圆的影响可分为表面效应，次表面效应或体效应，具体取决于发生氢引起作用的局部区域。通过μ-拉曼光谱法研究了氢相关缺陷的形成-包括空位-氢络合物，氢饱和的硅悬空键，陷于多个空位或血小板中的H_2分子-在注入氢，随后进行了等离子体氢化和退火的Cz Si晶片中进行了研究。在空气中或在形成气体的环境中进行退火。研究是在与标准工艺（如著名的smart-cut-R工艺）相比，以减少的注入剂量进行的离子切割工艺中，硅层剥落的离子切割工艺相关的条件下进行的。深度分辨μ-拉曼光谱也被用作鉴定处理过的晶片的次表面区域中各种与氢有关的缺陷的有用方法。研究表明，即使具有良好的空间分辨率，μ拉曼光谱法也是研究硅中与氢有关的缺陷的一种非常简单且有用的工具。

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《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.90-105|共16页
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R. Job; W. Duengen; Y. Ma; Y. L. Huang; J. T. Horstmann;
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University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany;

University of Dortmund, Department of Electrical Engineering and Information Technology, D-44227 Dortmund, Germany;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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专利

1. Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers [J] . R. Job, Y. Ma, Y.-L. Huang, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2004,第0期

机译：等离子体氢化切克劳斯基硅片的显微拉曼研究深度分辨缺陷分析
2. Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman [J] . Basnet Rabin, Sun Chang, Wu Huiting, Journal of Applied Physics . 2018,第24期

机译：n型切克劳斯基生长的硅中的环形缺陷：使用傅立叶变换红外光谱，微光致发光和微拉曼的高空间分辨率研究
3. Thermal evolution of hydrogen related defects in hydrogen implanted Czochralski silicon investigated by Raman spectroscopy and atomic force microscopy [J] . W. Duengen, R. Job, Y. Ma, Journal of Applied Physics . 2006,第3期

机译：拉曼光谱和原子力显微镜研究了氢注入的切克劳斯基硅中氢相关缺陷的热演化
4. MICRO-RAMAN ANALYSIS OF HYDROGEN RELATED DEFECTS IN CZOCHRALSKI SILICON [C] . R. Job, W. Dungen, Y. Ma, International Symposium on Microelectronics Technology and Devices . 2005

机译：Czochralski硅氢相关缺陷的微拉曼分析
5. Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material [D] . Vaqueiro Contreras, Michelle. 2019

机译：大量寿命限制Czochralski硅和石墨烯氧化物的缺陷作为表面钝化材料
6. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix [O] . Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, 2014

机译：氢等离子体处理非晶碳化硅基体减少硅量子点超晶格结构缺陷的研究
7. Hydrogen Passivation of B-O Defects in Czochralski Silicon [O] . Hallam Brett J., Wenham Stuart R., Hamer Phillip G., 2013

机译：直拉硅中B-O缺陷的氢钝化
8. Effect of High Pressure - High Temperature Treatment on Neutron Irradiation Induced Defects in Czochralski Silicon. [R] . Londos, C. A., Fytros, L. G., Misiuk, A., 2001

机译：高压 - 高温处理对中子辐照诱导的切克劳斯硅缺陷的影响。

MICRO-RAMAN ANALYSIS OF HYDROGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

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