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首页> 外文会议>Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; >FLOATING BODY/FLOATING WELL EFECTS IN DEEP SUBMICRON MOSFETs AT LIQUID NITROGEN TEMPERATURE
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FLOATING BODY/FLOATING WELL EFECTS IN DEEP SUBMICRON MOSFETs AT LIQUID NITROGEN TEMPERATURE

机译：液氮温度下深亚微米MOSFET的浮体/浮阱效应

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摘要

The floating well operation of bulk MOSFETs is studied at 77 K in order to get a better insight in the underlying physics. It will be shown that a metastable threshold voltage (V_T) behaviour can be induced by sweeping the linear characteristics from accumulation to inversion gate bias. Depending on the magnitude of the drain bias, a positive or negative V_T shift is obtained. This is related to the injected substrate current in accumulation, which corresponds to a gate tunnelling current for low V_(DS) and the Gate Induced Drain Leakage (GIDL) current at high V_(DS). Evidence will also be presented that in the latter case, the occurrence of impact ionisation near the drain leads to the turn on of the parasitic bipolar transistor, causing abrupt changes (latch) in the drain current and transconductance.
机译：为了在基础物理上获得更好的见识，对块状MOSFET的浮阱操作进行了研究（77 K）。将显示出，通过将线性特征从累积扫描到反向栅极偏置可以诱发亚稳态阈值电压（V_T）行为。取决于漏极偏压的大小，获得正或负的V_T偏移。这与累积的注入衬底电流有关，这对应于低V_（DS）的栅极隧穿电流和高V_（DS）的栅极感应漏漏电流（GIDL）。也将提供证据，在后一种情况下，在漏极附近发生碰撞电离会导致寄生双极晶体管导通，从而导致漏极电流和跨导突变（闩锁）。

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