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首页> 外文会议>Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; >SILICON MICROSTRUCTURES: 3-D MICROMACHINING WITH KOH SOLUTION
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SILICON MICROSTRUCTURES: 3-D MICROMACHINING WITH KOH SOLUTION

机译：硅微结构：用KOH解决方案进行3D微细化

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摘要

The micromachining of novel three-dimensional (3-D) structures for electrical neural signal registration is presented in this work. Looking for a well controlled etching mechanism, we have designed a set of layout with arrangements to identify the main crystalline planes which lead to the development of smooth walls and well-defined 3-D microstructures. The main layout was traced orthogonal to the primary flat of (0 0 1) silicon wafers. This arrangement includes the following: 15 structures aligned to [1 0 0] direction, the surface angle ranges from 13° to 20° with 0.5° step, and several structures for monitoring the etching mechanism. Finally, the resulting 3-D microstructures are presented and the proposed etching mechanism is explained in terms of the fast-etching planes. This experimental technique is suitable to develop 3-D microstructures for integrated optics applications.
机译：在这项工作中提出了用于电神经信号配准的新型三维（3-D）结构的微加工。为了寻找一种可控的蚀刻机制，我们设计了一套布局，以识别主要的晶面，从而形成光滑的壁和轮廓分明的3-D微结构。主要布局与（0 0 1）硅晶片的主平面正交。该布置包括以下内容：15个与[1 0 0]方向对齐的结构，表面角度范围为13°至20°（步距为0.5°），以及几个用于监视蚀刻机制的结构。最后，介绍了所得的3-D微结构，并根据快速蚀刻平面说明了建议的蚀刻机理。这种实验技术适合于开发用于集成光学应用的3-D微结构。

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