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首页> 外文会议>Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; >LOCAL ANODIC OXIDATION OF SILICON SURFACES USING ATOMIC FORCE MICROSCOPY
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LOCAL ANODIC OXIDATION OF SILICON SURFACES USING ATOMIC FORCE MICROSCOPY

机译：原子力显微镜对硅表面的局部阳极氧化

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摘要

Local anodic oxidation of silicon using Atomic Force Microscopy (AFM) was investigated by applying a negative voltage between a silicon nitride tip and p~+ doped Si(111) surfaces. All samples were cleaned with an ammonium-based solution known as standard cleaning 1 (SC1). The negative voltage was ranged from 15 V to 22.5 V and the oxidation was performed from 0 to 144 hours after the SC1 cleaning procedure. Localized square patterns of oxide were grown for 2 or 10 scans and step height was measured with the aid of contact-mode AFM without any applied voltage. From AFM analysis, it was obtained 3D and section profiles, which were used to obtain the oxide thickness as a function of applied voltage, number of scans and interval of time after SC1 cleaning. It was noteworthy that thickness increases with the applied negative voltage and with the number of scans.
机译：通过在氮化硅尖端和p〜+掺杂的Si（111）表面之间施加负电压，研究了使用原子力显微镜（AFM）研究硅的局部阳极氧化。所有样品均使用称为标准清洗剂1（SC1）的基于铵的溶液清洗。在SC1清洁程序之后，负电压范围为15 V至22.5 V，氧化过程为0至144小时。生长氧化物的局部正方形图案进行2或10次扫描，并借助接触模式AFM在不施加任何电压的情况下测量台阶高度。通过AFM分析，获得3D和截面轮廓，这些轮廓和轮廓用于获得氧化物厚度随施加电压，扫描次数和SC1清洁后的时间间隔的变化。值得注意的是，厚度随着施加的负电压和扫描次数而增加。

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