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首页> 外文会议>Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509; >POLYCRYSTALLIZATION OF a-SiC:H LAYERS BY EXCIMER LASER ANNEALING FOR TFT FABRICATION
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POLYCRYSTALLIZATION OF a-SiC:H LAYERS BY EXCIMER LASER ANNEALING FOR TFT FABRICATION

机译：用准分子激光退火对a-SiC：H层进行多晶化以制备TFT

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摘要

The characteristics of hydrogenated amorphous silicon carbide films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) and crystallized by KrF UV excimer laser annealing (ELA) are studied for different conditions to determine grain size, surface roughness, band gap and electrical resistivity. We also utilize as deposited and UV-ELA crystallized films to fabricate polycrystalline-SiC based TFTs and compare their performance. The results show that polycrystalline SiC TFTs obtained after UV ELA process have a quite satisfactory output characteristic (I_(ds) × V_(ds)), exhibiting I_(ds) values of the order of 16 nA (for V_(gs)=10 V), 4 times larger than the obtained with as deposited amorphous-SiC:H films.
机译：研究了在不同条件下通过等离子增强化学气相沉积（PECVD）制备并通过KrF UV准分子激光退火（ELA）结晶的氢化非晶碳化硅膜的特性，以确定晶粒尺寸，表面粗糙度，带隙和电阻率。我们还利用沉积和UV-ELA结晶膜来制造基于多晶SiC的TFT并比较其性能。结果表明，UV ELA工艺后获得的多晶SiC TFT具有令人满意的输出特性（I_（ds）×V_（ds）），其I_（ds）值约为16 nA（对于V_（gs）= 10 V），比沉积的非晶SiC：H薄膜大4倍。

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