GROWTH AND CHARACTERIZATION OF SILICON NANOCRYSTALS OBTAINED BY ION IMPLANTATION

机译：离子注入获得的硅纳米晶的生长与表征

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Experimental results on visible and near infrared photoluminescence (PL) at room temperature, Fourier transform infrared (FT1R) and high-resolution transmission electron microscopy (HRTEM), from Si nanocrystals (nc-Si) embedded in a SiO_2 matrix, are reported herein. The samples containing nc-Si was obtained by ion implantation and annealing of thermally grown SiO_2, on a (100) silicon wafer. PL was measured for two groups of samples. One group consists of samples obtained by different implantation doses and annealing times. Another group consists of samples obtained by an unique dose and annealing time, subsequently treated with post-annealing gas treatments. For the first group, a peak at 663nm (1.87eV) was observed for all implantation doses and annealing times. Samples of the second group, treated with post-annealing at 450℃ in environments of N_2, H_2 and forming gas (FG) showed an increasing of luminescence peak centered at 790nm (1.57eV). The post-annealing treatments showed that H_2 gas has a better performance for enhancing the PL intensity.

机译：本文报道了室温下可见和近红外光致发光（PL），傅立叶变换红外（FT1R）和高分辨率透射电子显微镜（HRTEM）的实验结果，这些结果来自嵌入在SiO_2基质中的Si纳米晶体（nc-Si）。通过离子注入和在（100）硅片上热生长的SiO_2进行退火，获得了包含nc-Si的样品。测量两组样品的PL。一组样品是通过不同的注入剂量和退火时间获得的。另一组由通过独特剂量和退火时间获得的样品组成，随后用退火后气体处理进行处理。对于第一组，在所有注入剂量和退火时间下均观察到663nm（1.87eV）的峰。第二组样品在N_2，H_2和形成气体（FG）的环境下于450℃进行后退火处理，其发光峰集中在790nm（1.57eV）处增加。后退火处理表明，H_2气体具有更好的增强PL强度的性能。

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《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.297-303|共7页
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G. O. Dias; S. N. M. Mestanza; J. E. C. Queiroz; E. S. V. P. Marins; I. Doi; E. Rodriguez; D. C. B. Tejero;
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Centra de Componentes Semicondutores CCS/FEEC-UNICAMP, CP6165, 13083-970 Campinas, SP, Brazil;

Instituto de Fisica Gleb Wataghin IFGW-UNICAMP, CP6165, 13083-970 Campinas, SP, Brazil;

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中图分类微电子学、集成电路（IC）;
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GROWTH AND CHARACTERIZATION OF SILICON NANOCRYSTALS OBTAINED BY ION IMPLANTATION

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