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Addition of PEG-Thiol to Cu Electroless Plating Bath for Realizing Perfect Conformal Deposition in Through-Si Via Holes for 3-D Integration

机译:将PEG-硫醇添加到铜化学镀液中,以实现用于3-D集成的硅通孔中的完美保形沉积

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摘要

In this study, we succeeded in forming a near-conformal Cu seed layer in TSVs with high aspect ratio (4 and 10) using electroless plating with the addition of PEG-thiol. It turned out that the addition of PEG-thiol to the Cu electroless plating bath has an inhibitional effect. By the combination of electroless Cu plating and subsequent Cu electroplating is very effective to completely fill TSVs with Cu. Thus this technology is a candidate for practical application of Cu seed layers.
机译:在这项研究中,我们成功地通过化学镀和添加PEG-硫醇在高纵横比(4和10)的TSV中形成了近等形的Cu晶种层。结果表明,向Cu化学镀浴中添加PEG-硫醇具有抑制作用。通过化学镀铜和随后的铜电镀的组合,非常有效地用铜完全填充TSV。因此,该技术是铜籽晶层实际应用的候选技术。

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  • 来源
  • 会议地点 Vienna(AT);Vienna(AT)
  • 作者单位

    Department of Mechanical Engineering, Kansai University, 3-3-35 Yamate-Cho, Suita, Osaka, Japan;

    Department of Mechanical Engineering, Kansai University, 3-3-35 Yamate-Cho, Suita, Osaka, Japan;

    National Institute of Communication Technology, 588-2 Iwaoka, Nishi-Ku, Kobe, Hyogo, Japan;

    National Institute of Communication Technology, 588-2 Iwaoka, Nishi-Ku, Kobe, Hyogo, Japan;

    Department of Mechanical Engineering, Kansai University, 3-3-35 Yamate-Cho, Suita, Osaka, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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