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首页> 外文会议>Processing, materials, and integration of damascene and 3D interconnects >Chemical Repair of plasma damaged porous ultra Iow-κ SiOCH film using a vapor phase process
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Chemical Repair of plasma damaged porous ultra Iow-κ SiOCH film using a vapor phase process

机译：气相法化学修复等离子体损伤的多孔超低κSiOCH薄膜

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Ultra 1ow-κ dielectrics (ULK) face a lot of difficulties especially with respect to plasma processing after patterning of such layers [1], The requirement of a κ-value of smaller than 2.5 [2] is achieved by the introduction of carbon and porosity into SiO~2 layers. It is reported that during plasma processes the ULK film is damaged, which is related to the carbon loss [3]. This is explained due to smaller dissociation energy for Si-C (~ 447 kJ/mol) compared to Si-0 (~ 800 kJ/mol) [4]. It was observed that during the carbon depletion dangling bonds occur [5], which form new Si-0 or Si-OH bonds after exposing to atmosphere or during the plasma process. Hence, an unfavorable degradation of the dielectric properties occurs, i.e. increasing κ-value [6]. For ULK layer restoration, silylation based repair processes are proposed [7]. During the repair process mainly Si-OH bonds are replaced by less polar tri-, di- or monomethylsilyl groups, using e.g. super critical CO_2 [8,9], vapor phase [10,11] or spin on processes. Many factors can influence the silylation reaction, like amount of reactive groups, kind of reactive groups and steric hindrance [7] of the silylation agent. Due to steric hindrance, chemicals with one reactive group like hexamethyldisilazane are not satisfactory. Those chemicals do not react with all existing silanol groups, since one trimethylsilyl group can blocks neighboring silanol groups [11]. Chemicals with two or three reactive groups tend to
机译：超1ow-κ电介质（ULK）面临很多困难，特别是在对此类层进行图案化之后的等离子体处理方面[1]。通过引入碳和碳可以达到κ值小于2.5 [2]的要求。孔隙度为SiO〜2层。据报道，在等离子工艺中，ULK膜被破坏，这与碳损失有关[3]。这是由于与Si-0（〜800 kJ / mol）相比，Si-C的离解能较小（〜447 kJ / mol）[4]。据观察，在碳耗尽过程中会出现悬空键[5]，在暴露于大气中或在等离子体处理过程中会形成新的Si-0或Si-OH键。因此，发生介电性能的不利降低，即增加κ值[6]。对于ULK层修复，提出了基于甲硅烷基化的修复方法[7]。在修复过程中，主要用例如极性较小的三，二或单甲基甲硅烷基取代Si-OH键。超临界CO_2 [8,9]，气相[10,11]或自旋过程。影响甲硅烷基化反应的因素很多，例如反应基团的数量，反应基团的种类和甲硅烷基化剂的位阻[7]。由于位阻，具有一个反应性基团的化学物质（如六甲基二硅氮烷）并不令人满意。这些化学物质不会与所有现有的硅烷醇基团发生反应，因为一个三甲基甲硅烷基基团可以阻断相邻的硅烷醇基团[11]。具有两个或三个反应性基团的化学物质倾向于

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