Quasi-bound Electronic States in Multiple Delta-doped Quantum Wells

机译：多个掺-量子阱中的准束缚电子态

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Multiple delta-doped quantum wells of n-type (Si doped GaAs) and p-type (Be doped GaAs) are studied theoretically looking for quasi-bound electron and hole states. The existence of these states and their strong energy and spatial localizations are demonstrated. The line-width and the mean life time are calculated. The FWHM is less than 10-11 eV (10-9 eV) and the corresponding mean life time is greater than 10-5 s (10-7 s) for n-(p-) type wells respectively. A strong spatial localization is observed in both cases.

机译：理论上研究了n型（Si掺杂的GaAs）和p型（Be掺杂的GaAs）的多个δ掺杂量子阱，以寻找准束缚电子和空穴态。这些状态的存在及其强大的能量和空间局域性得到了证明。计算线宽和平均寿命。对于n-（p-）型井，FWHM小于10-11 eV（10-9 eV），相应的平均寿命分别大于10-5 s（10-7 s）。在两种情况下均观察到强烈的空间定位。

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《Progress in electromagnetics research symposium 2008 (PIERS 2008)》|2008年|1-3|共3页
会议地点 Hangzhou(CN);Hangzhou(CN)
作者
I.Rodriguez-Vargas; A.del Rio de Santiago; S.J.Vlaev;
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Unidad Académica de Física,Universidad Autónoma de Zacatecas,Calzada Solidaridad Esquina con Paseo la Bufa S/N,98060 Zacatecas,ZAC.,Mexico;

Unidad Académica de Física,Universidad Autónoma de Zacatecas,Calzada Solidaridad Esquina con Paseo la Bufa S/N,98060 Zacatecas,ZAC.,Mexico;

Unidad Académica de Física,Universidad Autónoma de Zacatecas,Calzada Solidaridad Esquina con Paseo la Bufa S/N,98060 Zacatecas,ZAC.,Mexico;

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正文语种 eng
中图分类电磁学;
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1. Quasi-bound hole states in delta-doped quantum wells [J] . Vlaev SJ., Gaggero-Sager LM. Physica status solidi, B. Basic research . 2000,第1期

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2. Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers [J] . S. Jelev-Vlaev, J. Madrigal-Melchor, V.M. Gonzalez-Robles, Microelectronics journal . 2008,第3a4期

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3. Mean lifetimes of quasi-bound electronic states in single rectangular quantum wells [J] . S. J. Vlaev, V. M. Gonzalez Robles Physica Status Solidi. C, Conferences and critical reviews . 2005,第10期

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4. Quasi-bound Electronic States in Multiple Delta-doped Quantum Wells [C] . I.Rodriguez-Vargas, A.del Rio de Santiago, S.J.Vlaev Progress in electromagnetics research symposium . 2008

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5. Structural Properties of Ferroelectric Lead(Zirconium0.5,Titanium0.5)Oxygen3 Nanotube Array and Electronic Structure of Lao delta-doped strontium titanate. [D] . Adhikari, Rajendra P. 2013

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6. A delta-doped quantum well system with additional modulation doping [O] . Dong-Sheng Luo, Li-Hung Lin, Yi-Chun Su, 2011

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7. Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure [O] . M. E. Mora-Ramos, C. A. Duque 2006

机译：在静水压力下N型GaAsδ掺杂量子孔的电子状态

Quasi-bound Electronic States in Multiple Delta-doped Quantum Wells

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