• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Quantum sensing and nanophotonic devices VII >High Operating Temperature MWIR detectors
【24h】

High Operating Temperature MWIR detectors

机译：高工作温度MWIR检测器

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The High Operating Temperature Auger suppressed infrared detector concept is being pursued using the high density vertically integrated photodiode (HDVIP~?) architecture and an n~+-p device structure. Dark current densities as low as 2.5 mA/cm~2 normalized to a 5 μm cutoff at 250K have been demonstrated on these diodes. These dark currents imply minority carrier lifetimes in excess of 300μsec. 1/f noise in these devices arises from the tunneling of charge into the passivation interface, giving rise to a modulation in the surface positive charge and hence to the width of the depletion region in the p-side of the device and a modulation in the total dark current. The measured 1/f noise is in agreement with the predictions of this model, with very low noise being observed when the lifetimes are high.
机译：使用高密度垂直集成光电二极管（HDVIP〜？）体系结构和n〜+ -p器件结构，正在追求高工作温度俄歇抑制红外探测器的概念。在这些二极管上，已经证明了在250K时归一化为5μm截止的低至2.5mA / cm〜2的暗电流密度。这些暗电流意味着少数载流子的寿命超过300μsec。这些器件中的1 / f噪声来自电荷进入钝化界面的隧穿，从而引起表面正电荷的调制，从而引起器件p侧耗尽区的宽度以及器件p侧的调制。总暗电流。测得的1 / f噪声与该模型的预测一致，使用寿命长时会观察到非常低的噪声。

著录项

  • 来源
    《Quantum sensing and nanophotonic devices VII》|2010年|P.76081O.1-76081O.13|共13页
  • 会议地点 San Francisco CA(US)
  • 作者

    H.F. Schaake; rnM.A. Kinch; rnD. Chandra; rnP.K. Liao; rnD.F. Weirauch; rnC.-F. Wan; rnH.D. Shih;

  • 作者单位

    DRS-RSTA, Inc., Infrared Technologies Division, P.O. Box 740188, Dallas, Texas 75374-0118;

    rnDRS-RSTA, Inc., Infrared Technologies Division, P.O. Box 740188, Dallas, Texas 75374-0118;

    rnDRS-RSTA, Inc., Infrared Technologies Division, P.O. Box 740188, Dallas, Texas 75374-0118;

    rnDRS-RSTA, Inc., Infrared Technologies Division, P.O. Box 740188, Dallas, Texas 75374-0118;

    rnDRS-RSTA, Inc., Infrared Technologies Division, P.O. Box 740188, Dallas, Texas 75374-0118;

    rnDRS-RSTA, Inc., Infrared Technologies Division, P.O. Box 740188, Dallas, Texas 75374-0118;

    rnDRS-RSTA, Inc., Infrared Technologies Division, P.O. Box 740188, Dallas, Texas 75374-0118;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TP212;
  • 关键词

    mercury cadmium telluride; infrared detector; focal plane array; high operating temperature; HOT;

    机译：碲化汞镉;红外探测器焦平面阵列；工作温度高；热;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号