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MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

机译：MBE生长和中红外光电器件稀氮化物的表征

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摘要

We report the molecular beam epitaxial growth of narrow gap dilute nitride InAsN alloys onto GaAs substrates using a nitrogen plasma source. The photoluminescence (PL) of InAsN alloys with N-content in the range 0 to 1% which exhibit emission in the mid-infrared spectral range is described. The sample containing 1% N reveals evidence of recombination from extended and localized states within the degenerate conduction band of InAsN. A comparison of GaAs and InAs based material shows little change in PL linewidth such that the change in substrate does not cause significant reduction in quality of the epilayers. The band gap dependence on N content in our material is consistent with predictions from the band anti-crossing model. We also report the growth of InAsSbN/InAs multi-quantum wells which exhibit bright PL up to a temperature of 250 K without any post growth annealing. Consideration of the power dependent PL behaviour is consistent with Type I band alignment arising from strong lowering of the conduction band edge due to N-induced band anti-crossing effects.
机译：我们报告了使用氮等离子体源将窄间隙稀氮化物InAsN合金分子束外延生长到GaAs衬底上。描述了N含量在0-1％范围内的InAsN合金的光致发光（PL），该光致发光在中红外光谱范围内。含有1％N的样品揭示了InAsN简并导带中延伸和局部状态重组的迹象。 GaAs和InAs基材料的比较显示PL线宽几乎没有变化，因此衬底的变化不会引起外延层质量的显着降低。带隙对我们材料中N含量的依赖性与带隙反交叉模型的预测一致。我们还报告了InAsSbN / InAs多量子阱的生长，该阱在不进行任何后期生长退火的情况下，在高达250 K的温度下均显示出明亮的PL。与功率相关的PL行为的考虑与I型能带对准是一致的，该I型能带对准是由于N引起的能带反交叉效应而导致导带边缘强烈降低而引起的。

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