Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

De La Mare M.; Zhuang Q.; Dhar S.; Krier A.

首页> 外文期刊>Infrared physics and technology >Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

【24h】

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

机译：LPE和MBE生长的InAsN稀氮化合金的中红外光致发光

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Dilute nitride InAsN epitaxial layers were produced using both liquid phase and molecular beam epitaxial growth techniques. The spectral features in the photoluminescence of samples containing up to 1% N with emission energies in the mid-infrared spectral region are described and compared. The emission intensities of both LPE and MBE grown materials were found to be comparable. Increasing the N content in the InAsN alloys resulted in a significant increase in the activation energy for thermal quenching of the photoluminescence emission due to a combination of lowering of the conduction band edge and Auger de-tuning.

机译：使用液相和分子束外延生长技术生产稀氮化物InAsN外延层。描述和比较了含N高达1％的样品的光致发光光谱特征，并在中红外光谱区域中进行了发射。发现LPE和MBE生长材料的发射强度是可比的。 InAsN合金中N含量的增加导致光导发光猝灭的活化能显着增加，这是由于导带边缘的降低和俄歇失谐引起的。

著录项

来源
《Infrared physics and technology》 |2012年第5期|共4页
作者
De La Mare M.; Zhuang Q.; Dhar S.; Krier A.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类红外线;
关键词
Characterisation; Dilute nitrides; Liquid phase epitaxy; Molecular beam epitaxy;

机译：表征;稀氮化物;液相外延;分子束外延;

相似文献

外文文献
中文文献
专利

1. Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE [J] . De La Mare M., Zhuang Q., Dhar S., Infrared physics and technology . 2012,第5期

机译：LPE和MBE生长的InAsN稀氮化合金的中红外光致发光
2. Effects of substrate and N content on the growth of the mid-infrared dilute nitride InAsN alloy [J] . De La Mare M., Zhuang Q., Patanè A., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2012,第39期

机译：基质和氮含量对中红外稀氮化InAsN合金生长的影响
3. A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation [J] . M Debbichi, S Ridene, H Bouchriha, Semiconductor science and technology . 2009,第8期

机译：基于稀氮化物InAsN的中红外激光结构的理论研究
4. Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range [C] . M. de la Mare, Q. Zhuang, A. Patane, Sensors, systems, and next-generation satellites XIII . 2009

机译：InAsN / GaAs稀氮化物半导体合金在中红外光谱范围内的生长和表征
5. MBE-VLS grown zinc selenide and zinc sulfide nanowires: Growth mechanisms and photoluminescence properties. [D] . Chan, Siu Keung. 2007

机译：MBE-VLS生长的硒化锌和硫化锌纳米线：生长机理和光致发光特性。
6. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs [O] . Yuri G. Sadofyev, Nigamananda Samal 2010

机译：MBE在GaAs上生长的应变GaAsSb / GaAs QW结构的光致发光和能带排列
7. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP [O] . Wheatley Robert, Kesaria Manoj, Mwast L.J, 2015

机译：I型InAsN和InGaAsN在InP上生长的稀氮化物量子阱的扩展波长中红外光致发光
8. Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE- Grown InGaAs/GaAs RC LED and VCSEL Structures. [R] . Wojcik, A., Ochalski, T. J., Muszalski, J., 2002

机译：mBE生长的InGaas / Gaas RC LED和VCsEL结构的光致发光映射和角分辨光致发光。

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

摘要

著录项

相似文献

相关主题

期刊订阅