Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

机译：InAsN / GaAs稀氮化物半导体合金在中红外光谱范围内的生长和表征

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We report the successful growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range 0 to 1% and photoluminescence emission in the mid-infrared spectral range. The photoluminescence emission of the sample containing 1% N reveals evidence of recombination from extended and localized states within the degenerate conduction band of InAsN. A comparison of GaAs and InAs based material shows little change in FWHM suggesting the change in substrate does not cause significant reduction in quality of the epilayers. Material grown is consistent with predictions from the band anti-crossing model (BAC model).

机译：我们报告了使用氮等离子体源分子束外延成功地将InAsN生长到GaAs衬底上。我们描述了InAsN合金的光谱特性，其中N含量在0至1％的范围内，而光致发光在中红外光谱范围内。含1％N的样品的光致发光发射揭示了InAsN简并导带中扩展态和局部态重组的证据。 GaAs和InAs基材料的比较显示FWHM几乎没有变化，表明衬底的变化不会引起外延层质量的显着降低。增长的材料与谱带反交叉模型（BAC模型）的预测一致。

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来源
《Sensors, systems, and next-generation satellites XIII》|2009年|P.747422.1-747422.9|共9页
会议地点 Berlin(DE)
作者
M. de la Mare; Q. Zhuang; A. Patane; S. Dhar; A. Krier;
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作者单位

Physics Department, Lancaster University, Lancaster, LA1 4YB, UK;

rnPhysics Department, Lancaster University, Lancaster, LA1 4YB, UK;

rnSchool of Physics Astronomy, Nottingham University, NG7 2RD, UK;

rnDepartment of Electronic Science, University of Calcutta 92, A. P. C. Road, Kolkata-700009, India;

rnPhysics Department, Lancaster University, Lancaster, LA1 4YB, UK;

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正文语种 eng
中图分类人造卫星;雷达设备、雷达站;
关键词
molecular beam epitaxy; dilute nitride; photoluminescence; mid-infrared;

机译：分子束外延稀氮化物光致发光中红外;

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专利

1. Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range [J] . M. de la Mare, Q. Zhuang, A. Krier, Applied Physicsletters . 2009,第3期

机译：InAsN / GaAs稀氮化物半导体合金在中红外光谱范围内的生长和表征
2. Effects of substrate and N content on the growth of the mid-infrared dilute nitride InAsN alloy [J] . De La Mare M., Zhuang Q., Patanè A., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2012,第39期

机译：基质和氮含量对中红外稀氮化InAsN合金生长的影响
3. Extended wavelength mid-infrared photoluminescence from type-Ⅰ InAsN and InGaAsN dilute nitride quantum wells grown on InP [J] . R. Wheatley, M. Kesaria, L. J. Mawst, Applied Physics Letters . 2015,第23期

机译：InP上生长的Ⅰ型InAsN和InGaAsN稀氮化物量子阱的扩展波长中红外光致发光
4. Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range [C] . M. de la Mare, Q. Zhuang, A. Patane, SPIE Conference on Sensors, Systems, and Next-Generation Satellites . 2009

机译：用于中红外光谱范围的INASN / GAAs稀释氮化物半导体合金的生长和表征
5. Effects of plasma species during the molecular-beam epitaxy growth of dilute nitride semiconductors for infrared optoelectronic device applications. [D] . Oye, Michael Mikio. 2006

机译：在红外光电器件应用的稀氮化物半导体的分子束外延生长过程中，等离子体种类的影响。
6. Dilute nitride and GaAs n-i-p-i solar cells [O] . Simone Mazzucato, Benjamin Royall, Richard Ketlhwaafetse, 2012

机译：稀氮化物和GaAs n-i-p-i太阳能电池
7. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP [O] . Wheatley Robert, Kesaria Manoj, Mwast L.J, 2015

机译：I型InAsN和InGaAsN在InP上生长的稀氮化物量子阱的扩展波长中红外光致发光

Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

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