Effects of substrate and N content on the growth of the mid-infrared dilute nitride InAsN alloy

De La Mare M.; Zhuang Q.; Patanè A.; Krier A.

首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Effects of substrate and N content on the growth of the mid-infrared dilute nitride InAsN alloy

【24h】

Effects of substrate and N content on the growth of the mid-infrared dilute nitride InAsN alloy

机译：基质和氮含量对中红外稀氮化InAsN合金生长的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We investigate the epitaxial growth of the dilute nitride InAsN alloy onto InAs and GaAs substrates with nitrogen content up to 1%. We report photoluminescence (PL) emission within the 2-4μm spectral region and show that InAsN grown onto GaAs exhibits no degradation of the PL intensity and linewidth compared with epitaxial layers grown on near lattice-matched InAs substrates. Also, nitrogen can induce a significant reduction in the thermal quenching of the PL emission, which we attribute to the reduction in non-radiative Auger-recombination.

机译：我们研究了氮含量高达1％的InAs和GaAs稀氮化物InAsN合金的外延生长。我们报告了在2-4μm光谱区域内的光致发光（PL）发射，并表明与在接近晶格匹配的InAs衬底上生长的外延层相比，生长在GaAs上的InAsN并未表现出PL强度和线宽的降低。同样，氮可以导致PL发射的热猝灭显着减少，这归因于非辐射俄歇复合体的减少。

著录项

来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2012年第39期|共4页
作者
De La Mare M.; Zhuang Q.; Patanè A.; Krier A.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Effects of substrate and N content on the growth of the mid-infrared dilute nitride InAsN alloy [J] . De La Mare M., Zhuang Q., Patanè A., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2012,第39期

机译：基质和氮含量对中红外稀氮化InAsN合金生长的影响
2. Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range [J] . M. de la Mare, Q. Zhuang, A. Krier, Applied Physicsletters . 2009,第3期

机译：InAsN / GaAs稀氮化物半导体合金在中红外光谱范围内的生长和表征
3. Extended wavelength mid-infrared photoluminescence from type-Ⅰ InAsN and InGaAsN dilute nitride quantum wells grown on InP [J] . R. Wheatley, M. Kesaria, L. J. Mawst, Applied Physics Letters . 2015,第23期

机译：InP上生长的Ⅰ型InAsN和InGaAsN稀氮化物量子阱的扩展波长中红外光致发光
4. Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range [C] . M. de la Mare, Q. Zhuang, A. Patane, Sensors, systems, and next-generation satellites XIII . 2009

机译：InAsN / GaAs稀氮化物半导体合金在中红外光谱范围内的生长和表征
5. Effects of plasma species during the molecular-beam epitaxy growth of dilute nitride semiconductors for infrared optoelectronic device applications. [D] . Oye, Michael Mikio. 2006

机译：在红外光电器件应用的稀氮化物半导体的分子束外延生长过程中，等离子体种类的影响。
6. Modeling the Effects of Cu Content and Deformation Variables on the High-Temperature Flow Behavior of Dilute Al-Fe-Si Alloys Using an Artificial Neural Network [O] . Mohammad Shakiba, Nick Parson, X.-Grant Chen 2016

机译：使用人工神经网络模拟Cu含量和变形变量对Al-Fe-Si稀合金高温流动行为的影响
7. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP [O] . Wheatley Robert, Kesaria Manoj, Mwast L.J, 2015

机译：I型InAsN和InGaAsN在InP上生长的稀氮化物量子阱的扩展波长中红外光致发光

Effects of substrate and N content on the growth of the mid-infrared dilute nitride InAsN alloy

摘要

著录项

相似文献

相关主题

期刊订阅