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首页> 美国政府科技报告 >Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE- Grown InGaAs/GaAs RC LED and VCSEL Structures.
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Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE- Grown InGaAs/GaAs RC LED and VCSEL Structures.

机译：mBE生长的InGaas / Gaas RC LED和VCsEL结构的光致发光映射和角分辨光致发光。

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This paper reports on a systematic investigation of the emission properties of microcavity devices RESONANT-CAVITY LIGHT-EMITTING DIODES (RC leds) and vertical-cavity surface-emitting lasers (VCSELs) fabricated from molecular beam epitaxy (MBE)-grown heterostructures. The optimization of such structures requires proper tuning of the wavelength of radiation emitted from the quantum-well active region, the peak reflectivity of distributed Bragg reflectors, and cavity resonance. The authors demonstrate the results of two techniques used to study Indium Gallium Arsenide/Gallium Arsenide (InGaAs/GaAs) RC LED and VCSEL structures. The first technique used was spatially resolved photoluminescence, which is mapping of the spontaneous emission and the cavity resonance wavelength over the whole epitaxial structure. This technique allows for the precise determination of wavelength tuning of the structure with resonant cavity. Of course, it should be borne in mind that the frequency of the cavity resonance depends on the angle of observation. To study this effect the authors performed angle-resolved emission measurements, which yield information about the directionality of RC LED emissions. The results of the study provide a better understanding of the physical processes underlying light generation in microcavity devices. The information provided by both methods is crucial for designing optimum MBE growth processes and for selecting the areas of the wafer from which useful devices can be fabricated. Since the measurements were made at room temperature, they are directly applicable to devices. (8 figures, 8 refs.).

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