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首页> 外文会议>Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009 >A low-power dual-band oscillator based on band-limited negative resistance
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A low-power dual-band oscillator based on band-limited negative resistance

机译：基于带限负电阻的低功耗双频振荡器

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This paper presents a 2.1/3.9 GHz oscillator based on switching the negative resistance bandwidth of a capacitively degenerated common collector stage, while using a high order resonance tank. Multi-band oscillators have traditionally been implemented by reconfiguring the oscillator tank. In this paper, we employ a fixed high order resonator, and move the bandswitching mechanism from the tank to the loss compensation network (i.e. negative resistance network), thus maintaining the high quality factor of the tank at multiple oscillation frequencies. The proposed oscillator is implemented in a 30 GHz fT GaAs process with VBE =1.3 V. The measured phase noise for both bands is -136 dBc/Hz at 1 MHz with a power consumption of 5.1 mW, and a FOM of -195.39 dBc/Hz and -200.72 dBc/Hz for 2.1 and 3.9 GHz respectively.
机译：本文提出了一种基于2.1 / 3.9 GHz的振荡器，该振荡器基于切换电容性退化的公共集电极级的负电阻带宽，同时使用高阶谐振电路。传统上，多频带振荡器是通过重新配置振荡器槽来实现的。在本文中，我们使用固定的高阶谐振器，并将频带切换机制从储罐移至损耗补偿网络（即负电阻网络），从而在多个振荡频率下保持储罐的高品质因数。拟议的振荡器在30 GHz f T GaAs工艺中实现，V BE = 1.3V。在1 MHz下，两个频带的测得相位噪声为-136 dBc / Hz功耗为5.1 mW，对于2.1 GHz和3.9 GHz的FOM分别为-195.39 dBc / Hz和-200.72 dBc / Hz。

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