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Orientation Selectivity of Secondary Recrystallization In Grain-Oriented Silicon Steel

机译：取向硅钢二次再结晶的取向选择性

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It has been observed that grain size of Goss secondary grain has a strong correlation with deviation angle from the exact Goss orientation and sharper Goss grain has larger grain diameter. This orientation selectivity of secondary recrystallization has been investigated with the statistical model of grain growth in which inhibitor and texture are taken into account. The model assumes that sharper Goss grain has a higher frequency of CSL boundaries to the matrix grains and thus has lower statistical grain boundary energy and suffers lower pinning force from the inhibitor. The analysis showed that this model successfully explains orientation selectivity and depicts the effect of inhibitor and texture.
机译：已经观察到，高斯二次晶粒的尺寸与偏离精确的高斯取向的偏角具有很强的相关性，并且更锋利的高斯晶粒具有更大的粒径。已经使用考虑了抑制剂和织构的晶粒生长统计模型研究了二次重结晶的这种取向选择性。该模型假设较尖锐的戈斯晶粒对基体晶粒具有更高的CSL边界频率，因此具有较低的统计晶粒边界能，并且受到抑制剂的钉扎力较小。分析表明，该模型成功解释了方向选择性，并描述了抑制剂和质地的作用。

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