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Modeling time-dependent dielectric breakdown with and without barriers

机译：在有障碍物和无障碍物的情况下对时间相关的介电击穿进行建模

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Time-dependent-dielectric-breakdown is quickly becoming a very important topic as low-k materials are integrated into back-end-of-the-line processes and as interconnect dielectric thicknesses approach the sub 100 nm range. There still exists a considerable amount of debate on the dominant failure mechanism with or without the presence of a diffusion barrier. We have developed a series of models for copper-accelerated time-to-failure that we are using to guide an experimental program to understand failure mechanisms. The models are based on the injection and drift of copper ions and focus on an increase in the local electric field that allows electrons to enter the dielectric's conduction band. The models are successful at correlating the time-to-failure for SiO_2 dielectrics with and without barriers. The most important aspects of the model that we are trying to verify experimentally include the role of moisture in the dielectric oxidizing Cu to form injectable ions, the initiation of failure at the pore-matrix interface in porous dielectrics, a decrease in the time-to-failure in porous dielectrics due to an increase in Cu solubility, and the need for near perfect barriers to realize the advantage of using a barrier. The key unknown parameters in all these models are the diffusivities and solubilities of copper ions in the materials. Models of this type are not restricted to just interlayer dielectrics. Several failure mechanisms associated with semi-conducting and organic light emitting diodes may also be described by models of this type.
机译：随着低介电常数材料集成到后端工艺中，并且互连介电层厚度接近100 nm以下，随时间变化的介电击穿迅速成为一个非常重要的话题。关于存在或不存在扩散障碍的主导失效机制，仍然存在大量争论。我们已经开发了一系列加速铜失效时间的模型，这些模型可用来指导实验程序来了解失效机理。这些模型基于铜离子的注入和漂移，并着重于局部电场的增加，该电场使电子进入电介质的导带。该模型成功地关联了带有和不带有势垒的SiO_2电介质的失效时间。我们试图通过实验验证的模型的最重要方面包括水分在电介质中氧化铜以形成可注入离子的作用，在多孔电介质中的孔-基质界面处引发破坏，缩短制备时间-由于增加了铜的溶解度，导致多孔介电材料失效，并且需要近乎完美的阻挡层以实现使用阻挡层的优势。所有这些模型中的关键未知参数是材料中铜离子的扩散度和溶解度。这种类型的模型不仅限于层间电介质。与半导体和有机发光二极管相关的几种故障机理也可以用这种类型的模型来描述。

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