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Novel backside sample preparation processes for advanced CMOSintegrated circuits failure analysis

机译：用于高级CMOS 集成电路故障分析的新型背面样品制备过程

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Backside sample preparation techniques are reported for advancednintegrated circuits (ICs) packaged in conventional wire-bond ceramic andnplastic packages as well as in flip-chip packages. Backside samplenpreparation is an enabling step to other backside FA techniques such asninfrared (IR) emission microscopy and IR-based internal signal voltagenprobing. The sample preparation steps involve heat sink/package milling,nand silicon substrate thinning and polishing. In addition, the use of annantireflection coating (ARC) layer to improve the success rate andnsensitivity of backside photo-emission microscopy is presented

机译：已报道了用于以常规引线键合陶瓷和塑料封装以及倒装芯片封装的先进集成电路（IC）的背面样品制备技术。背面样品制备是其他背面FA技术（例如红外（IR）发射显微镜和基于IR的内部信号电压探测）的一个使能步骤。样品制备步骤包括散热器/封装铣削，硅基板减薄和抛光。此外，还介绍了使用反反射涂层（ARC）来提高背面光发射显微镜的成功率和灵敏度的问题。

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《Requirements Engineering (RE 2007)》|2007年|p.119-122|共4页
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作者
Chew Y.Y.; Siek K.H.; Yee W.M.;
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Dept. for Quality Reliability, Intel Technol. Sdn. Bhd., Penang;

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原文格式 PDF
正文语种 eng
中图分类自动化技术、计算机技术;
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专利

1. Advanced backside sample preparation for multi-technique surface analysis [J] . Py M., Veillerot M., Fabbri J.M., The European physical journal. Applied physics . 2011,第3期

机译：先进的背面样品制备技术，可进行多种技术的表面分析
2. Advanced backside failure analysis in 65 nm CMOS technology [J] . Stephane Bianic, Stephanie Allemand, Gregory Kerrosa, Microelectronics & Reliability . 2007,第9a11期

机译：65 nm CMOS技术中的高级背面故障分析
3. Failure analysis technique by extracting the TEM samples from the backside of LSI chips [J] . H. Maeda, M. Furuta, N. Hashikawa, 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2001,第516期

机译：通过从LSI芯片背面提取TEM样本进行故障分析技术
4. Novel backside sample preparation processes for advanced CMOS integrated circuits failure analysis [C] . Chew, Y.Y., Siek, . 1999

机译：用于高级CMOS集成电路故障分析的新型背面样品制备过程
5. Advanced failure modes and effects analysis: A method for predicting and evaluating failures in products and processes. [D] . Kmenta, Steven. 2001

机译：高级故障模式和影响分析：一种用于预测和评估产品和过程中的故障的方法。
6. Secondary Ion Mass Spectrometry Imaging of Molecular Distributions in Cultured Neurons and their Processes: Comparative Analysis of Sample Preparation [O] . Kevin R. Tucker, Zhen Li, Stanislav S. Rubakhin, -1

机译：分子分布在培养的神经元及其过程的二次离子质谱成像：样品制备的比较分析
7. Sample preparation for aberration-corrected microscopy of high-quality TEM specimens of advanced integrated circuits [O] . C.S. Bonifacio, M. Campin, K. McIlwrath, 2018

机译：试样矫正显微镜的样品制备高质量集成电路的高质量TEM标本
8. Exploratory Nondestructive Evaluation (NDE) Research for Advanced Materials and Processes. Volume 1: High Resolution Computed Tomography for Failure Analysis [R] . Bossi, R. , Knutson, B. , Nerenberg, R. , 1998

机译：先进材料和工艺的探索性无损评估（NDE）研究。第1卷：用于故障分析的高分辨率计算机断层扫描

Novel backside sample preparation processes for advanced CMOSintegrated circuits failure analysis

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