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Eluding Metal Contamination in CMOS Front-End Fabrication by Nanocrystal Formation Process

机译：纳米晶体形成工艺在CMOS前端制造中消除金属污染

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摘要

A technique to form metal nanocrystals on silicon or thin SiO_2 film by Rapid Thermal Annealing (RTA) of thin metal film is developed and integrated into standard CMOS processing to make EEPROM devices and improve metal-semiconductor contact resistance. Ⅰ-Ⅴ and C-V measurements are carried out on MOSFETs and MOS capacitors containing Au, Ag, Pt, and Si nanocrystals as floating gate for universal mobility and minority carrier lifetime extraction. Mobility around 300 cm~2/V-sec and minority carrier lifetime within 0.02 ～ 0.1 μsec are observed for all cases including the control samples that do not go through the metal nanocrystal formation process, which suggests that the substrate is virtually free from metal contamination. Using this technique, thicker metal film can potentially be achieved as well by stitching thin metal layers on top of the nanocrystals.
机译：开发了一种通过金属薄膜的快速热退火（RTA）在硅或SiO_2薄膜上形成金属纳米晶体的技术，并将其集成到标准CMOS工艺中以制造EEPROM器件并提高金属与半导体的接触电阻。在包含Au，Ag，Pt和Si纳米晶体作为浮栅的MOSFET和MOS电容器上进行Ⅰ-Ⅴ和C-V测量，以实现通用迁移率和少数载流子寿命提取。在所有情况下，包括未经过金属纳米晶体形成过程的对照样品，都可观察到300 cm〜2 / V-sec左右的迁移率和0.02〜0.1μsec内的少数载流子寿命，这表明基材实际上没有金属污染。使用这种技术，也可以通过在纳米晶体顶部缝合薄金属层来获得更厚的金属膜。

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