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首页> 外文会议>Self-Assembly Processes in Materials >Atomic Self-ordering in Heteroepitaxially Grown Semiconductor Quantum Dots due to Relaxation of External Lattice Mismatch Strains
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Atomic Self-ordering in Heteroepitaxially Grown Semiconductor Quantum Dots due to Relaxation of External Lattice Mismatch Strains

机译：由于外部晶格失配应变的弛豫，异质外延生长的半导体量子点中的原子自定序。

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摘要

Thermodynamic arguments are presented for the formation of atomic order in heteroepitaxially grown semiconductor quantum dots. From thermodynamics several significant properties of these systems can be derived, such as an enhanced critical temperature of the disorder-order transition, the possible co-existence of differently ordered domains of varying size and orientation, the possible existence of structures that have not been observed before in semiconductors, the occurrence of atomic order over time, and the occurrence of short range order when the growth proceeds at low temperatures. Transmission electron microscopy results support these predictions. Finally, we speculate on the cause for the observed increase in life time of (In,Ga)As/GaAs. quantum dot lasers [H-Y. Liu et al., Appl. Phys. Lett. 79,2868(2001)].
机译：提出了在异质外延生长的半导体量子点中形成原子序的热力学论点。从热力学可以得出这些系统的几个重要特性，例如无序转变的临界温度提高，大小和方向不同的不同序域的可能共存，未观察到的结构的可能存在。在半导体中，原子序随时间而发生，而在低温下进行生长时则发生短程有序。透射电子显微镜结果支持了这些预测。最后，我们推测了（In，Ga）As / GaAs寿命增加的原因。量子点激光器[H-Y。 Liu et al。，Appl.Chem.Soc。，2004，48，3257。物理来吧79,2868（2001）]。

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